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Molecular Beam Epitaxy pp 120–158Cite as

In-Growth Characterization Techniques

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Abstract

The experimental arrangement of MBE is unique among epitaxial thin film preparation methods in that it enables one to study and control the growth process in situ in several ways. In particular, reflection high energy electron diffraction (RHEED) allows direct measurements of the surface structure of the substrate wafer and the already grown epilayer. It also allows observation of the dynamics of MBE growth [4.1–20]. The forward scattering geometry of RHEED is most appropriate for MBE, since the electron beam is at grazing incidence (Fig. 3.28), whereas the molecular beams impinge almost normally on the substrate. Therefore, RHEED may be called an in-growth surface analytical technique.

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  1. Institute of Physics, Polish Academy of Sciences, al. Lotnikow 46, PL-02-668, Warszawa, Poland

    Dr. Marian A. Herman

  2. Institut für Experimentalphysik, Johannes-Kepler-Universität, A-4040, Linz/Auhof, Austria

    Dr. Helmut Sitter

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Herman, M.A., Sitter, H. (1989). In-Growth Characterization Techniques. In: Molecular Beam Epitaxy. Springer Series in Materials Science, vol 7. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-97098-6_4

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