Characteristics of an Efficient ZnS Blue Light-Emitting Diode with a High-Resistivity ZnS Layer Grown by Metalorganic-Chemical-Vapour-Deposition
An efficient ZnS blue light-emitting diode which consists of MπS structure has been reproducibly fabricated. A high-resistivity ZnS epitaxial layer as a π layer can be grown by low-pressure metalorganic-chemical-vapour deposition. Diode characteristics have been evaluated by means of current-voltage and forward-biased electroluminescence spectra measurements. Room temperature external quantum efficiency as high as about 0.04% can be obtained. It is shown that the recombination process is originated from the free-to-bound deep acceptor transition at higher forward current densities.
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