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Electroluminescence pp 183–186Cite as

Sulphur Defects and Deep Levels in SrS:Ce Thin Films

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Part of the book series: Springer Proceedings in Physics ((SPPHY,volume 38))

Abstract

The integrated charge-applied voltage (Q-V) characteristics, voltage induced light waveforms, photo-excitation efficiency and photo-induced capacitance change in SrS:Ce thin films have been studied. Low clamp electric field strength is not an extrinsic characteristic caused by sulphur defect but an intrinsic characteristic caused by Ce doping. Sulphur defects reduce emission intensity generated by recombination of electrons and ionized Ce. Cerium generates deep levels in SrS and acts as a carrier source.

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References

  1. B. Tsujiyama, Y. Tamura, J. Ohwaki and H. Kozawaguchi: 1986 SID Digest Papers p. 37.

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Author information

Authors and Affiliations

  1. NTT Opto-Electronics Laboratories, Tokai-Mura, Naka-Gun, Ibaraki-Ken, 319-11, Japan

    Y. Tamura & H. Kozawaguchi

Authors
  1. Y. Tamura
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  2. H. Kozawaguchi
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Editor information

Editors and Affiliations

  1. Department of Electronics, Tokyo Engineering University, 1404 Katakura, Hachioji, Tokyo 192, Japan

    Shigeo Shionoya Ph.D.

  2. Department of Electronics, Tottori University, Koyama, Tottori 680, Japan

    Hiroshi Kobayashi Ph.D.

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© 1989 Springer-Verlag Berlin, Heidelberg

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Tamura, Y., Kozawaguchi, H. (1989). Sulphur Defects and Deep Levels in SrS:Ce Thin Films. In: Shionoya, S., Kobayashi, H. (eds) Electroluminescence. Springer Proceedings in Physics, vol 38. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-93430-8_39

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  • DOI: https://doi.org/10.1007/978-3-642-93430-8_39

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-93432-2

  • Online ISBN: 978-3-642-93430-8

  • eBook Packages: Springer Book Archive

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