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High-Luminance ZnS:Sm, F Thin-Film Electroluminescent Devices Using Ferroelectric PbTiO3 Thin-Film

  • R. Fukao
  • H. Fujikawa
  • M. Nakamura
  • Y. Hamakawa
  • S. Ibuki
Part of the Springer Proceedings in Physics book series (SPPHY, volume 38)

Abstract

Performances of ZnS:Sm,F thin-film electroluminescent(EL) devices using ferroelectric PbTiO3 and silicon nitride(SiNx) thin films as insulating layers have been examined. The threshold voltage of the device(Vth) and the field strength in the phosphor layer(Eth) are 90V and 1.1MV/cm respectively and are low as compared with those of the conventional EL devices. Considerably high luminance of 400cd/m2 (at 1kHz) is obtained, and is due to the large amount of carriers injected from PbTiO3 layer into the phosphor layer.

Keywords

Silicon Nitride Phosphor Layer Luminous Efficiency High Luminance Maximum Luminance 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Literature

  1. 1.
    K. Okamoto, Y. Nasu and Y. Hamakawa, IEEE Trans. Electron Devices ED 28, 698(1981).CrossRefGoogle Scholar
  2. 2.
    R. Fukao, T. Manabe and Y. Hamakawa, Extended abstracts of 172nd electrochemical society meeting, 87-2, 1719 (1987).Google Scholar

Copyright information

© Springer-Verlag Berlin, Heidelberg 1989

Authors and Affiliations

  • R. Fukao
    • 1
  • H. Fujikawa
    • 1
  • M. Nakamura
    • 1
  • Y. Hamakawa
    • 1
  • S. Ibuki
    • 2
  1. 1.Faculty of Engineering ScienceOsaka UniversityToyonaka-shi, Osaka 560Japan
  2. 2.Faculty of EngineeringSetsunan UniversityIkeda, Neyagaea-shi, Osaka 572Japan

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