High-Luminance ZnS:Sm, F Thin-Film Electroluminescent Devices Using Ferroelectric PbTiO3 Thin-Film
Performances of ZnS:Sm,F thin-film electroluminescent(EL) devices using ferroelectric PbTiO3 and silicon nitride(SiNx) thin films as insulating layers have been examined. The threshold voltage of the device(Vth) and the field strength in the phosphor layer(Eth) are 90V and 1.1MV/cm respectively and are low as compared with those of the conventional EL devices. Considerably high luminance of 400cd/m2 (at 1kHz) is obtained, and is due to the large amount of carriers injected from PbTiO3 layer into the phosphor layer.
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