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Auger Effect in Semiconductors: Why Does It Matter for Electroluminescence?

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Electroluminescence

Part of the book series: Springer Proceedings in Physics ((SPPHY,volume 38))

Abstract

The Coulomb interaction between a free carrier and the electrons at a localized center may lead to either impact excitation, or to a reverse effect — the Auger effect. This review summarizes a current status of the experiment and theory of the Auger effect and its relationship to the quantum efficiency of high-field electroluminescence. Mechanisms (electric-dipole versus exchange) governing the Auger-type energy transfer processes are discussed. I also comment on limits imposed by the effect on a possible laser action in systems utilizing intra-center radiative transitions in order to achieve laser action.

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Author information

Authors and Affiliations

  1. Institute of Physics, Polish Academy of Sciences, 02-668, Warsaw, Al.Lotnikow 32/46, Poland

    J. M. Langer

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  1. J. M. Langer
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Editors and Affiliations

  1. Department of Electronics, Tokyo Engineering University, 1404 Katakura, Hachioji, Tokyo 192, Japan

    Shigeo Shionoya Ph.D.

  2. Department of Electronics, Tottori University, Koyama, Tottori 680, Japan

    Hiroshi Kobayashi Ph.D.

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© 1989 Springer-Verlag Berlin, Heidelberg

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Langer, J.M. (1989). Auger Effect in Semiconductors: Why Does It Matter for Electroluminescence?. In: Shionoya, S., Kobayashi, H. (eds) Electroluminescence. Springer Proceedings in Physics, vol 38. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-93430-8_3

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  • DOI: https://doi.org/10.1007/978-3-642-93430-8_3

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-93432-2

  • Online ISBN: 978-3-642-93430-8

  • eBook Packages: Springer Book Archive

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