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Bound-Excitonic Emissions in Undoped and Mn-Doped ZnS Single Crystals

  • T. Taguchi
Conference paper
Part of the Springer Proceedings in Physics book series (SPPHY, volume 38)

Abstract

Excitonic emissions observed in undoped and Mn-doped ZnS single crystals with cubic modification have been investigated by means of the temperature dependence of photo-luminescence intensity and the doublet structure. Reflectance spectrum at 4.2 K indicates that an exciton dip appears at 3.803 eV and the longitudinal-transverse splitting energy of free exciton is about 4 meV when 4πβ is 1.05×10-2 and ∈ is 8.1, respectively. Thermal dissociation energy of the free exciton is estimated to be about 40 meV. Assuming that the zero-phonon line associated with an Mn emission is ascribed to an isoelectronic-trap bound exciton, the doublet structure and thermal dissociation process are reasonably interpreted.

Keywords

Free Exciton Excitonic Emission Doublet Structure Solid State Communication Thermal Dissociation Process 
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References

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Copyright information

© Springer-Verlag Berlin, Heidelberg 1989

Authors and Affiliations

  • T. Taguchi
    • 1
  1. 1.Faculty of EngineeringOsaka UniversitySuita, Osaka 565Japan

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