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Measurement of Trap Levels in Electroluminescent Devices by Photon-Released Residual Charges

  • H. Uchiike
  • M. Noborio
  • T. Tatsumi
  • S. Hirao
  • Y. Fukushima
Conference paper
Part of the Springer Proceedings in Physics book series (SPPHY, volume 38)

Abstract

Thin-film ac electroluminescent (EL) devices, consisting of a ZnS:Mn active layer sandwiched by a pair of insulating layers, have trap levels in the active layer as well as in the active layer-insulating layer interfaces [1]. Carriers trapped in these levels generate polarized charges and the memory function of a ZnS:Mn EL display is considered to be caused by these polarized charges [2]. Therefore, identification of these trap levels is necessary in order to clarify the operation mechanism of the EL display.

Keywords

Monochromatic Light Nitrogen Laser Trap Level Thermally Stimulate Current Operation Mechanism 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. 1.
    D.H. Smith: J. Lumin. 23, 209 (1981).CrossRefGoogle Scholar
  2. 2.
    H. Kobayashi, S. Tanaka, H. Sasakura, K. Tsuji, R. Tueta: Appl. Phys. Lett. 40, 1024 (1982).ADSCrossRefGoogle Scholar
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    K. Okamoto, S. Miura: Appl. Phys. Lett. 49, 1596 (1986).ADSCrossRefGoogle Scholar
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    T. Shibata, K. Hirabayashi, H. Kozawaguchi, B. Tsujiyama: Ext. Abstract of 34th Spr. Mtg., J. Soc. Appl. Phys. 879 (1987).Google Scholar

Copyright information

© Springer-Verlag Berlin, Heidelberg 1989

Authors and Affiliations

  • H. Uchiike
    • 1
  • M. Noborio
    • 1
  • T. Tatsumi
    • 1
  • S. Hirao
    • 1
  • Y. Fukushima
    • 1
  1. 1.Faculty of EngineeringHiroshima UniversityShitami, Saijou-chou, Higashi-Hiroshima 724Japan

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