Measurement of Trap Levels in Electroluminescent Devices by Photon-Released Residual Charges
Thin-film ac electroluminescent (EL) devices, consisting of a ZnS:Mn active layer sandwiched by a pair of insulating layers, have trap levels in the active layer as well as in the active layer-insulating layer interfaces . Carriers trapped in these levels generate polarized charges and the memory function of a ZnS:Mn EL display is considered to be caused by these polarized charges . Therefore, identification of these trap levels is necessary in order to clarify the operation mechanism of the EL display.
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