Abstract
The optical properties of rare earth ions in solids have been of interest for many years. However, the luminescence properties of 4f ions in III–V semiconductors and silicon have remained unexplored, despite their obvious potential for light emitting and laser diodes. The characteristic photoluminescence and electroluminescence spectra of rare earth ions in III–V and silicon semiconductors were reported recently [1–4].
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© 1989 Springer-Verlag Berlin, Heidelberg
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Lozykowski, H.J. (1989). Novel Step Impact Electroluminescent Devices. In: Shionoya, S., Kobayashi, H. (eds) Electroluminescence. Springer Proceedings in Physics, vol 38. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-93430-8_10
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DOI: https://doi.org/10.1007/978-3-642-93430-8_10
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