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The Influence of Structure and Impurity Precipitation on the Electrical Properties of the Grain Boundaries in Silicon: Copper Precipitation in the Σ = 25 Boundary

  • M. Aucouturier
  • A. Broniatowski
  • A. Chari
  • J. L. Maurice
Part of the Springer Proceedings in Physics book series (SPPHY, volume 35)

Abstract

The paper presents an overview of the structural and chemical factors involved in the electrical activity of the grain boundaries in silicon. The case of the Σ=25 boundary is discussed in detail. Impurity segregation at this boundary has been evidenced by combined Energy Dispersive X-ray analysis in Scanning Transmission Electron Microscopy and Secondary Ion Mass Spectroscopy. The densities of boundary states in heat treated specimens have been measured by Deep Level Transient Spectroscopy, showing a strong dependence of the electronic properties on the annealing time and the cooling rate of the specimens. The recombination properties and their dependence on passivation treatments in hydrogen have been investigated, using photocapacity, EBIC and LBIC measurements. The discussion of these electrical and microanalytical data suggests an implication in the electrical properties of the boundary, of precipitated metallic impurities.

Keywords

Electron Spin Resonance Minority Carrier Deep Level Transient Spectroscopy Minority Carrier Lifetime Electron Beam Induce Current 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag Berlin, Heidelberg 1989

Authors and Affiliations

  • M. Aucouturier
    • 1
  • A. Broniatowski
    • 2
  • A. Chari
    • 1
  • J. L. Maurice
    • 3
  1. 1.Laboratoire de Physique des SolidesCNRSMeudon CedexFrance
  2. 2.G.P.S.-E.N.SUniversité Paris VIIParis Cedex 05France
  3. 3.Laboratoire de Physique des MatériauxCNRSMeudon CedexFrance

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