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The Influence of Structure and Impurity Precipitation on the Electrical Properties of the Grain Boundaries in Silicon: Copper Precipitation in the Σ = 25 Boundary

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Polycrystalline Semiconductors

Part of the book series: Springer Proceedings in Physics ((SPPHY,volume 35))

Abstract

The paper presents an overview of the structural and chemical factors involved in the electrical activity of the grain boundaries in silicon. The case of the Σ=25 boundary is discussed in detail. Impurity segregation at this boundary has been evidenced by combined Energy Dispersive X-ray analysis in Scanning Transmission Electron Microscopy and Secondary Ion Mass Spectroscopy. The densities of boundary states in heat treated specimens have been measured by Deep Level Transient Spectroscopy, showing a strong dependence of the electronic properties on the annealing time and the cooling rate of the specimens. The recombination properties and their dependence on passivation treatments in hydrogen have been investigated, using photocapacity, EBIC and LBIC measurements. The discussion of these electrical and microanalytical data suggests an implication in the electrical properties of the boundary, of precipitated metallic impurities.

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Author information

Authors and Affiliations

  1. Laboratoire de Physique des Solides, CNRS, F-92195, Meudon Cedex, France

    M. Aucouturier & A. Chari

  2. G.P.S.-E.N.S, Université Paris VII, F-75251, Paris Cedex 05, France

    A. Broniatowski

  3. Laboratoire de Physique des Matériaux, CNRS, F-92195, Meudon Cedex, France

    J. L. Maurice

Authors
  1. M. Aucouturier
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  2. A. Broniatowski
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  3. A. Chari
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  4. J. L. Maurice
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Editor information

Editors and Affiliations

  1. Department of Materials Science and Engineering, Case Western Reserve University, Cleveland, OH, 44106, USA

    Hans J. Möller

  2. Technische Universität Hamburg-Harburg, D-2100, Hamburg 90, Fed. Rep. of Germany

    Horst P. Strunk

  3. Max-Planck-Institut für Festkörperforschung, Heisenbergstr. 1, D-7000, Stuttgart 80, Fed. Rep. of Germany

    Jürgen H. Werner

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© 1989 Springer-Verlag Berlin, Heidelberg

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Aucouturier, M., Broniatowski, A., Chari, A., Maurice, J.L. (1989). The Influence of Structure and Impurity Precipitation on the Electrical Properties of the Grain Boundaries in Silicon: Copper Precipitation in the Σ = 25 Boundary. In: Möller, H.J., Strunk, H.P., Werner, J.H. (eds) Polycrystalline Semiconductors. Springer Proceedings in Physics, vol 35. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-93413-1_9

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  • DOI: https://doi.org/10.1007/978-3-642-93413-1_9

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-93415-5

  • Online ISBN: 978-3-642-93413-1

  • eBook Packages: Springer Book Archive

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