Microstructure and Interfaces of Polysilicon in Integrated Circuits

  • H. Cerva
  • H. Oppolzer
Part of the Springer Proceedings in Physics book series (SPPHY, volume 35)


The microstructure of polysilicon thin films and their interfaces to the silicon substrate or to thermally grown oxides determine strongly the electrical performance of silicon devices. Transmission electron microscopy (TEM) of thin cross-sections reveals structural details as a function of film depth whereas elemental analysis with high spatial resolution in a scanning TEM provides information on dopant distribution. The changes in microstructure and surface roughness of polysilicon films with parameters such as deposition temperature, type of dopant and annealing conditions is reviewed. Thermal oxidation of polysilicon can result in strongly nonplanar oxide/polysilicon interfaces. The morphology of the thin oxide film and segregation effects at the poly/monosilicon interface are discussed.


Sheet Resistance Arsenic Concentration Deposition Temperature Silicon Film Interfacial Oxide 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


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Copyright information

© Springer-Verlag Berlin, Heidelberg 1989

Authors and Affiliations

  • H. Cerva
    • 1
  • H. Oppolzer
    • 1
  1. 1.Research LaboratoriesSiemens AGMünchen 83Fed. Rep. of Germany

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