Abstract
The microstructure of polysilicon thin films and their interfaces to the silicon substrate or to thermally grown oxides determine strongly the electrical performance of silicon devices. Transmission electron microscopy (TEM) of thin cross-sections reveals structural details as a function of film depth whereas elemental analysis with high spatial resolution in a scanning TEM provides information on dopant distribution. The changes in microstructure and surface roughness of polysilicon films with parameters such as deposition temperature, type of dopant and annealing conditions is reviewed. Thermal oxidation of polysilicon can result in strongly nonplanar oxide/polysilicon interfaces. The morphology of the thin oxide film and segregation effects at the poly/monosilicon interface are discussed.
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© 1989 Springer-Verlag Berlin, Heidelberg
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Cerva, H., Oppolzer, H. (1989). Microstructure and Interfaces of Polysilicon in Integrated Circuits. In: Möller, H.J., Strunk, H.P., Werner, J.H. (eds) Polycrystalline Semiconductors. Springer Proceedings in Physics, vol 35. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-93413-1_48
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DOI: https://doi.org/10.1007/978-3-642-93413-1_48
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