Grain Boundary States in Float-Zone Silicon Bicrystals

  • G. Petermann
  • P. Haasen
Part of the Springer Proceedings in Physics book series (SPPHY, volume 35)


A near ∑25 grain boundary has been studied electrically in FZ-silicon at various degrees of n-doping. The boundary is electrically active without previous heat treatment. A unique density-of-states can be derived from dc and ac measurements at all dopings and temperatures investigated. The model of the charged g.b. includes potential fluctuations in the g.b. plane. Admittance spectroscopy allows one to differentiate between g.b. states and deep centers in the compensating space charge zone.


Barrier Height Deep Center Admittance Spectroscopy Maximum Barrier Cross Barrier 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.


  1. 1.
    X.J. Wu, W. Szkielko, P. Haasen: J. de Phys. C1, 135 (1982)Google Scholar
  2. 2.
    W. Szkielko, G. Petermann: In Poly-microcrystalline and Amorphous Semiconductors, ed. by P. Pinard and S. Kalbitzer (Les Edit. de Physique, Paris, 1985) p.379.Google Scholar
  3. 3.
    CR.M. Grovenor: J. de Phys. C18, 4079 (1985).Google Scholar
  4. 4.
    F.J. Stützler, H.J. Queisser: J. Appl. Phys. 60, 3910 (1986).CrossRefGoogle Scholar
  5. 5.
    A. Broniatowski: Phys. Rev. B36, 5696 (1987).Google Scholar
  6. 6.
    J. Matakura: Jap. Jl. Appl. Phys. 2, 91 (1963).CrossRefGoogle Scholar
  7. 7.
    G.E. Pike, C.H. Seager: J. Appl. Phys. 50, 3414 (1979).CrossRefGoogle Scholar
  8. 8.
    D.J. Thomson, H.C. Card: J. Appl. Phys. 54, 1976 (1983).CrossRefGoogle Scholar
  9. 9.
    E.H. Nicollian, A. Götzberger: Bell Syst. Tech. J. 46, 1055 (1967).Google Scholar
  10. 10.
    J. Werner: In Polycrystalline Semiconductors, ed. by G. Harbeke (Springer, Berlin 1985) p.76.CrossRefGoogle Scholar
  11. 11.
    G. Blatter, F. Greuter: Phys. Rev. B33, 3952 (1986).Google Scholar
  12. 12.
    G. Petermann: Phys. Stat. Sol. (a) 106. 535 (1988).CrossRefGoogle Scholar
  13. 13.
    G. Petermann, P. Haasen: Proceed. MRS Meeting Boston (1987), in press.Google Scholar
  14. 14.
    G. Petermann: Thesis Göttingen (1987).Google Scholar

Copyright information

© Springer-Verlag Berlin, Heidelberg 1989

Authors and Affiliations

  • G. Petermann
    • 1
    • 2
  • P. Haasen
    • 1
    • 2
  1. 1.Institut für MetallphysikUniversität GöttingenGöttingenFep. Rep. of Germany
  2. 2.SFB 126GöttingenFed. Rep. of Germany

Personalised recommendations