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Growth of Sb-Doped Epitaxial Si Layers Through Recrystallization of Poly-Si on a (100) Si Substrate

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Polycrystalline Semiconductors

Part of the book series: Springer Proceedings in Physics ((SPPHY,volume 35))

Abstract

We have investigated an Sb-enhanced solid-phase epitaxy of Si on a p-type (100)Si substrate through recrystallization of heavily Sb-doped polycrystalline Si (poly-Si) which is obtained by intermixing amorphous Si and Sb thin films during a heat treatment. By using cross-sectional transmission electron microscopy, we show that a high concentration of Sb enhances recrystallization of poly-Si, which eventually results in an epitaxial growth of Si. This is likely due to two possible mechanisms: an enhanced Si self-diffusivity caused by a high dopant concentration, and/or carrier recombination taking place at the interface between poly-Si and mono-crystalline Si, which enhances the mass transport at the interface.

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Author information

Authors and Affiliations

  1. Department of Physics and Measurement Technology, Linköping University, S-58183, Linköping, Sweden

    S. F. Gong, H. T. G. Hentzell & G. Radnoczi

  2. IBM T.J. Watson Research Center, Yorktown Heights, NY, 10598, USA

    A. Charai

Authors
  1. S. F. Gong
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  2. H. T. G. Hentzell
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  3. G. Radnoczi
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  4. A. Charai
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Editor information

Editors and Affiliations

  1. Department of Materials Science and Engineering, Case Western Reserve University, Cleveland, OH, 44106, USA

    Hans J. Möller

  2. Technische Universität Hamburg-Harburg, D-2100, Hamburg 90, Fed. Rep. of Germany

    Horst P. Strunk

  3. Max-Planck-Institut für Festkörperforschung, Heisenbergstr. 1, D-7000, Stuttgart 80, Fed. Rep. of Germany

    Jürgen H. Werner

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© 1989 Springer-Verlag Berlin, Heidelberg

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Gong, S.F., Hentzell, H.T.G., Radnoczi, G., Charai, A. (1989). Growth of Sb-Doped Epitaxial Si Layers Through Recrystallization of Poly-Si on a (100) Si Substrate. In: Möller, H.J., Strunk, H.P., Werner, J.H. (eds) Polycrystalline Semiconductors. Springer Proceedings in Physics, vol 35. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-93413-1_40

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  • DOI: https://doi.org/10.1007/978-3-642-93413-1_40

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-93415-5

  • Online ISBN: 978-3-642-93413-1

  • eBook Packages: Springer Book Archive

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