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Laser Recrystallization of Polysilicon for Improved Device Quality

  • R. Buchner
  • K. Haberger
  • B. Hu
Conference paper
Part of the Springer Proceedings in Physics book series (SPPHY, volume 35)

Abstract

Thin polysilicon layers have been recrystallized using an argon laser scanning system. Integrated absorbers have been used in order to achieve an entrainment of the grain boundaries. MOS transistors have been fabricated in such recrystallized films and characterized through electrical measurements.

Keywords

Molten Zone Polysilicon Layer Polysilicon Film Entire Wafer Gaussian Intensity Profile 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag Berlin, Heidelberg 1989

Authors and Affiliations

  • R. Buchner
    • 1
  • K. Haberger
    • 1
  • B. Hu
    • 1
  1. 1.Fraunhofer-Institut für FestkörpertechnologieMünchen 60Fed. Rep. of Germany

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