Laser Recrystallization of Polysilicon for Improved Device Quality
Thin polysilicon layers have been recrystallized using an argon laser scanning system. Integrated absorbers have been used in order to achieve an entrainment of the grain boundaries. MOS transistors have been fabricated in such recrystallized films and characterized through electrical measurements.
KeywordsMolten Zone Polysilicon Layer Polysilicon Film Entire Wafer Gaussian Intensity Profile
Unable to display preview. Download preview PDF.
- 5.R. Buchner, K. Haberger, P. Seegebrecht, P. Panish: Proceedings ESSDERC’87, ed. by G. Soncini and P. U. Calzolari (North-Holland, Amsterdam 1988), p. 571Google Scholar
- 6.R. Büchner, K. Haberger, P. Seegebrecht, P. Panish: European SOI Workshop, Meylan, Digest of Tech. Papers, ed. by D. Bensahel and G. Bomchil, p. B-05, 1988Google Scholar