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Crystallized Silicon Films for Active Devices

  • Conference paper
Polycrystalline Semiconductors

Part of the book series: Springer Proceedings in Physics ((SPPHY,volume 35))

Abstract

The crystallization of amorphous silicon films deposited by LPCVD on glass substrates has been investigated by Transmission Electron Microscopy. The average grain size of the silicon films ranges from 0.3 µm up to 0.5 µm according to the deposition temperature and the post-annealing temperature. The TFT’s fabricated with these silicon films, using a two-mask process, exhibit a field-effect mobility higher than 5 cm2 V-1s-1 and a Ion/Ioff ratio in the 106 range.

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Author information

Authors and Affiliations

  1. LAB/OCM/TIC, Centre National d’Etudes des Télécommunications, B.P. 40, F-22301, Lannion Cedex, France

    B. Loisel & L. Haji

  2. Laboratoire de Microélectronique, Université de Rennes 1, B.P. 150, F-22302, Lannion Cedex, France

    P. Joubert & M. Guendouz

Authors
  1. B. Loisel
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  2. L. Haji
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  3. P. Joubert
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  4. M. Guendouz
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Editor information

Editors and Affiliations

  1. Department of Materials Science and Engineering, Case Western Reserve University, Cleveland, OH, 44106, USA

    Hans J. Möller

  2. Technische Universität Hamburg-Harburg, D-2100, Hamburg 90, Fed. Rep. of Germany

    Horst P. Strunk

  3. Max-Planck-Institut für Festkörperforschung, Heisenbergstr. 1, D-7000, Stuttgart 80, Fed. Rep. of Germany

    Jürgen H. Werner

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© 1989 Springer-Verlag Berlin, Heidelberg

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Loisel, B., Haji, L., Joubert, P., Guendouz, M. (1989). Crystallized Silicon Films for Active Devices. In: Möller, H.J., Strunk, H.P., Werner, J.H. (eds) Polycrystalline Semiconductors. Springer Proceedings in Physics, vol 35. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-93413-1_38

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  • DOI: https://doi.org/10.1007/978-3-642-93413-1_38

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-93415-5

  • Online ISBN: 978-3-642-93413-1

  • eBook Packages: Springer Book Archive

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