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Crystallized Silicon Films for Active Devices

  • B. Loisel
  • L. Haji
  • P. Joubert
  • M. Guendouz
Part of the Springer Proceedings in Physics book series (SPPHY, volume 35)

Abstract

The crystallization of amorphous silicon films deposited by LPCVD on glass substrates has been investigated by Transmission Electron Microscopy. The average grain size of the silicon films ranges from 0.3 µm up to 0.5 µm according to the deposition temperature and the post-annealing temperature. The TFT’s fabricated with these silicon films, using a two-mask process, exhibit a field-effect mobility higher than 5 cm2 V-1s-1 and a Ion/Ioff ratio in the 106 range.

Keywords

Gate Voltage Silicon Film Thin Film Transistor Polycrystalline Silicon Drain Voltage 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag Berlin, Heidelberg 1989

Authors and Affiliations

  • B. Loisel
    • 1
  • L. Haji
    • 1
  • P. Joubert
    • 2
  • M. Guendouz
    • 2
  1. 1.LAB/OCM/TICCentre National d’Etudes des TélécommunicationsLannion CedexFrance
  2. 2.Laboratoire de MicroélectroniqueUniversité de Rennes 1Lannion CedexFrance

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