Crystallization Processes and Structures of Semiconductor Films

  • L. N. Aleksandrov
Conference paper
Part of the Springer Proceedings in Physics book series (SPPHY, volume 35)


This paper reviews the growth and regrowth of thin films. Special emphasis is placed on the influence of parameters of pulse heating on the crystallographic structure of regrown silicon. Experimental data are accompanied by numerical simulations of nucleation processes, structural changes, point defect formation and doping under pulse heating. The whole sequence from remelting to recrystallization is discussed.


Film Growth Silicon Layer Gallium Arsenide Liquid Phase Epitaxy Amorphous Layer 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.


  1. 1.
    L.N. Aleksandrov: Transitional Regions of Epitaxial Semiconductor Films (Nauka, Novosibirsk 1978)Google Scholar
  2. 2.
    A.A. Chernov, E.I. Givargizov, H.S. Bagdasarov et al.: Modern Crystallography, Vol. 3, Crystal Formation (Nauka, Moscow 1980)Google Scholar
  3. 3.
    L. Aleksandrov: Growth of Crystalline Semiconductor Materials on Crystal Surfaces, Thin Films Science and Technology, Vol. 5 (Elsevier, Amsterdam 1984)Google Scholar
  4. 4.
    L.N. Aleksandrov, R.N. Lovyagin: Vacuum 27, 311 (1978)CrossRefGoogle Scholar
  5. 5.
    L.N. Aleksandrov: J. Jpn. Assoc. Cryst. Growth 5, 199 (1978)Google Scholar
  6. 6.
    L.N. Aleksandrov: Surf. Sci. 86, 144 (1979)CrossRefGoogle Scholar
  7. 7.
    L.N. Aleksandrov: J. Cryst. Growth 48, 635 (1980)CrossRefGoogle Scholar
  8. 8.
    L.N. Aleksandrov: In Synthesis and Growth of Perfect Semiconductor Crystals and Films, ed. by L.N. Aleksandrov (Nauka, Novosibirsk 1981) p. 45Google Scholar
  9. 9.
    J.C. Bean: J. Cryst. Growth 81, 411 (1987)CrossRefGoogle Scholar
  10. 10.
    L.N. Aleksandrov: J. Electrochem. Soc. 132, 102C(130) (1985)CrossRefGoogle Scholar
  11. 11.
    L.N. Aleksandrov, S.V. Lozovskii, S.Yu. Knyazev: Lett. Zh. Tekh. Fiz. 13, 1080 (1987);Google Scholar
  12. 11a.
    L.N. Aleksandrov, S.V. Lozovskii, S.Yu. Knyazev: Phys. Stat. Sol. (a) 107, 213 (1988)CrossRefGoogle Scholar
  13. 12.
    L.N. Aleksandrov, L.A. Mitlina, A.L. Vasilyev, V.A. Mikhailov: Cryst. Res. Technol. 21, 89 (1986)CrossRefGoogle Scholar
  14. 13.
    J.M. Poate: In Laser and Electron Beam Interactions with Solids, ed. by B.R. Appleton, G.K. Celler (North-Holland, New York 1982), Vol.4, p. 121Google Scholar
  15. 14.
    L.N. Aleksandrov: Issues of atomic science and engineering, Ser. Fizika Rad. Povr. Rad. Mater. 3(31), 73 (1984)Google Scholar
  16. 15.
    L.N. Aleksandrov: Kinetics of Crystallization and Regrowth of Semiconductor Films (Nauka, Novosibirsk 1985)Google Scholar
  17. 16.
    G. Auvert, D. Bensahel, A. Perio, V.T. Nguyen, G.A. Rozgonyi: Appl. Phys. Lett. 39, 724 (1981)CrossRefGoogle Scholar
  18. 17.
    L.N. Aleksandrov: In Crystal Growth, ed. by E.I. Givargizov, Vol. 14 (Nauka, Moscow 1983) p. 12Google Scholar
  19. 18.
    L.N. Aleksandrov: Prog. Cryst. Growth Characterization 9, 227 (1984)CrossRefGoogle Scholar
  20. 19.
    O.A. Kulyasova, V.Yu. Balandin, A.V. Dvurechenskii, L.N. Aleksandrov: Zh. Tekh. Fiz. 57, 2397 (1987)Google Scholar
  21. 20.
    V.Yu. Balandin, A.V. Dvurechenskii, L.N. Aleksandrov: Phys. Stat. Sol. (a) 73, 587 (1982); 81, 63 (1984)CrossRefGoogle Scholar
  22. 21.
    L.N. Aleksandrov, V.Yu. Balandin, A.V. Dvurechenskii: Avtometria 1, 64 (1987)Google Scholar
  23. 22.
    L.N. Aleksandrov: Cryst. Res. Technol. 16, 1247 (1981)Google Scholar
  24. 23.
    L.N. Aleksandrov, A.N. Kogan, R.V. Bochkova, N.P. Tristina: Crystallographia 30, 236 (1985)Google Scholar
  25. 24.
    L.N. Aleksandrov, A.N. Kogan, V.I. Dyakonova, N.P. Trostina: Poverkhnost. Fiz. Khim. Mekh. 3, 135 (1985)Google Scholar
  26. 25.
    L.N. Aleksandrov, A.N. Kogan, N.P. Tikhonova: Phys. Stat. Sol. (a) 92, 109 (1985)CrossRefGoogle Scholar
  27. 26.
    R.L. Schwoebel: J. Appl. Phys. 40, 614 (1969)CrossRefGoogle Scholar
  28. 27.
    L.N. Aleksandrov, R.V. Bochkova, N.P. Tikhonova: Crystal Res. Technol. 23, 150 (1988)CrossRefGoogle Scholar
  29. 28.
    L.V. Sokolov, M.A. Lamin, V.A. Markov, V.I. Mashanov, O.P. Pchelyakov, S.I. Stenin: Lett. Zh. Tekh. Fiz. 44, 278 (1986)Google Scholar
  30. 29.
    L.N. Aleksandrov: Thin Solid Films 100, 283 (1983)CrossRefGoogle Scholar
  31. 30.
    L.N. Aleksandrov: Phys. Stat. Sol. (a) 76, 179 (1983)CrossRefGoogle Scholar
  32. 31.
    L.N. Aleksandrov, A.V. Dvurechenskii, N.M. Igonina, M. Gripentrog, H. Klose: Pover-khnost. Fiz. Khim. Mekh. 11, 95 (1984)Google Scholar
  33. 32.
    L.N. Aleksandrov: Vacuum (GB) 36, 455 (1986)CrossRefGoogle Scholar
  34. 33.
    L.N. Aleksandrov, J.J. Belousov, V.M. Efimov: Thin Solid Films 157, 337 (1988)CrossRefGoogle Scholar
  35. 34.
    L.N. Aleksandrov: In Growth Processes in Semiconductor Crystals and Films, ed. by F.A. Kuznetsov (Nauka, Novosibirsk 1988) p. 23Google Scholar
  36. 35.
    V.Yu. Balandin, A.V. Dvurechenskii, L.N. Aleksandrov: Poverkhnost. Fiz. Khim. Mekh. 1, 53 (1986); 7, 79 (1988)Google Scholar
  37. 36.
    V.Yu. Balandin, A.V. Dvurechenskii, L.N. Aleksandrov: Zh. Tekh. Fiz. 56, 807 (1986)Google Scholar
  38. 37.
    R.F. Wood, G.A. Geist: Phys. Rev. B 34, 2606 (1986)CrossRefGoogle Scholar
  39. 38.
    J. Narayan, C.W. White: Appl. Phys. Lett. 44, 35 (1984)CrossRefGoogle Scholar
  40. 39.
    L.N. Aleksandrov, V.Yu. Balandin, A.V. Dvurechenskii, O.A. Kulyasova: Thin Solid Films (to be published)Google Scholar
  41. 40.
    N.J. Stein, P.S. Peercy: In Laser-Solid Interaction and Transient Thermal Processing of Materials, ed. by A.G. Cullis (Elsevier, New York 1983) p. 229Google Scholar
  42. 41.
    A.G. Cullis: In Int. Conf. Def. Semicond. 1982, Physica 116B, 527 (1983)Google Scholar
  43. 42.
    L.N. Aleksandrov: In Properties and Structure of Dislocations in Semiconductors, ed. by Yu.A. Osipyan (Nauka, Moscow 1988) p. 15Google Scholar
  44. 43.
    W.F. Tseng, J.W. Mayer, S.U. Campisano, G. Foti, L. Rimini: Appl. Phys. Lett. 32, 824 (1978)CrossRefGoogle Scholar
  45. 44.
    A.G. Cullis: Rep. Prog. Phys. 48, 1155 (1985)CrossRefGoogle Scholar
  46. 45.
    H.J. Möller, H.H. Singer: In Poly crystalline Semiconductors, ed. by G. Harbeke, Springer Ser. Solid-State Sci., Vol. 57 (Springer, Berlin, Heidelberg 1985) p. 18Google Scholar
  47. 46.
    L.N. Aleksandrov, E.V. Nidayev, A.L. Vasilyev: Lett. Zh. Tekh. Fiz. 14, 838 (1988)Google Scholar
  48. 47.
    E.I. Givargizov: In Crystal Growth, ed. by E.I. Givargizov, Vol. 14 (Nauka, Moscow 1983) p. 5Google Scholar
  49. 48.
    L.N. Aleksandrov, V.Yu. Balandin, A.V. Dvurechenskii, O.A. Kulyasova: In Proc. Europ. SOI Workshop, ed. by D. Bensahel (CNET-CNS, Meylan 1988) p. A-15Google Scholar
  50. 49.
    L.N. Aleksandrov: In International School on Crystal Growth Char act., ed. by P. Ramasamy (COSTED, Madras 1988) p. 86Google Scholar
  51. 50.
    T. Shibata, K.F. Lee, J.F. Gibbons, T.J. Magee, J. Peng, J.D. Hong: J. Appl. Phys. 52, 3625 (1981)CrossRefGoogle Scholar
  52. 51.
    N.K. Annamalai, N. Meyyappan, A.N. Khondker: Thin Solid Films 155, 97 (1987)CrossRefGoogle Scholar
  53. 52.
    R. Manaila, A. Devenyi, P.B. Barna, G. Radnoczi: Thin Solid Films 158, 299 (1988)CrossRefGoogle Scholar

Copyright information

© Springer-Verlag Berlin, Heidelberg 1989

Authors and Affiliations

  • L. N. Aleksandrov
    • 1
  1. 1.Institute of Semiconductor PhysicsSiberian Branch of the USSR Academy of SciencesNovosibirskUSSR

Personalised recommendations