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Grain Boundary Structure in S-WEB Silicon Ribbon

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Polycrystalline Semiconductors

Part of the book series: Springer Proceedings in Physics ((SPPHY,volume 35))

Abstract

Electrical activity and structure of the defects in S-WEB silicon ribbon are characterized by EBIC and TEM, resp. The EBIC indicates electrical activity at grain boundaries other than coherent and symmetrical twin boundaries, and at dislocations attached to these boundaries as well as occurring in the grain volume. The analysis by TEM shows that the structure of the ribbon is dominated by Σ=3 twin boundaries, which may react to form short segments of Σ=9 second order twin boundaries. No twin boundaries of even higher order are encountered in this investigation.

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© 1989 Springer-Verlag Berlin, Heidelberg

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Vanko, P., Strunk, H.P., Grabmaier, J.G. (1989). Grain Boundary Structure in S-WEB Silicon Ribbon. In: Möller, H.J., Strunk, H.P., Werner, J.H. (eds) Polycrystalline Semiconductors. Springer Proceedings in Physics, vol 35. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-93413-1_26

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  • DOI: https://doi.org/10.1007/978-3-642-93413-1_26

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-93415-5

  • Online ISBN: 978-3-642-93413-1

  • eBook Packages: Springer Book Archive

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