Generation of Radiation Defects in the Vicinity of Twin Boundaries in EFG Silicon Ribbons

  • J. Kątcki
  • D. Ast
Conference paper
Part of the Springer Proceedings in Physics book series (SPPHY, volume 35)


Irradiation of EFG silicon in the 400kV HREM generates two kinds of radiation defects. The first kind are {113} planar faults. When a {113} defect encounters a twin boundary at an angle close to 80° the defect penetrates the boundary and continu es on the mirror symmetric {113} plane. Defects which encounter a twin band at an inclination of 30° are not able to penetrate the boundary. This difference can be explained by considering the size of the Burger’s vector of the residual defect left in the boundary. The second kind are {111} faults which appear as single defects or in groups in which the defects are offset relative to each other. The {111} defects are nucleated preferentially at or near the twin boundary. In narrow twins the/are observed to nucleate exclusively on the outside of twin bands but in wider twins they also form inside. This finding can be explained by considering the interaction between the interstitial, which is an extended defect and the twin boundary, which is a planar defect in which higher order nearest neighbor distances are reduced.


Twin Boundary Habit Plane Extended Defect Radiation Defect Planar Fault 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


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  1. 1.
    C. A. Ferreira Lima, A. Howie: Philos. Maq. 34, 1057 (1976)CrossRefGoogle Scholar
  2. 2.
    I. G. Salisbury. M. H. Loretto: Philos. Maq. A39, 317 (1979)CrossRefGoogle Scholar
  3. 3.
    I. G. Salisbury: J.Microscopy 118, 75 (1980)CrossRefGoogle Scholar
  4. 4.
    M. D. Matthews, S. J. Ashby: Philos.Maq. 27, 1313 (1973)CrossRefGoogle Scholar
  5. 5.
    A. L. Aseev, V. M. Astakhov: Sov.Phys.Solid State 24, 1163 (1982)Google Scholar
  6. 6.
    M. Pasemann, D. Hoehl, A. L. Aseev, O. P. Pchelyakov: Phys.Stat.Sol. (a) 80, 135 (1983)CrossRefGoogle Scholar
  7. 7.
    H. Bartsch, D. Hoehl, G. Kastner. Phys.Stat.Sol. (a) 83, 543 (1984)CrossRefGoogle Scholar
  8. 8.
    T. Y. Tan, H. Foell, S. Mader, W. Krakow: in Defects in Semiconductors, ed. by T. Y. Tan, J. Narayan, Mater.Res.Soc.Symp.Proc. vol. 2, 1981 (North-Holland, Amsterdam 1981) p. 179.Google Scholar
  9. 9.
    T. Y. Tan: Philos.Maq. A44. 101 (1981)CrossRefGoogle Scholar
  10. 10.
    M. Kuwabara, H. Endoh, Y. Tsubokawa, H. Hashimoto, Y. Yokota, R. Shimizu: in In Situ Experiments with High Yoltage Electron Microscopes, ed. by H. Fujita (Research Center for Ultra-High Voltage Electron Microscopy, Osaka Univ., 1985) p. 341Google Scholar
  11. 11.
    Y. Tsubokawa, M. Kuwabara, H. Endoh, H. Hashimoto: Proceedings of XIth Congress on Electron Microscopy. Kyoto, 1986, p. 953.Google Scholar
  12. 12.
    E. Nes, J. Washburn: J.Appl.Phys. 42, 3559 (1971)CrossRefGoogle Scholar
  13. 13.
    F. Y. Wald: in Poly-micro-crystalline and amorphous semiconductors, ed. by P. Pinard, S. Kalbitzer (Les Editions de Physique, Les Ulis, France, 1984) p. 33Google Scholar
  14. 14.
    Mobil Solar Energy Corp., 4 Suburban Park Dr., Billerica, MA 01821Google Scholar
  15. 15.
    P. G. Merli. U. Valdre: J.Phys.E: Sci.Instrum: 5, 933 (1972)CrossRefGoogle Scholar
  16. 16.
    J. Katcki, D. Ast: J.Appl.Phys. 64, 1. (1988)CrossRefGoogle Scholar
  17. 17.
    J. C. Barry, H. Alexander: Proceeding of the 45th Annual Meeting of the EMSA. 242 (1987)Google Scholar
  18. 18.
    R. Gleichmann, M. D. Vaudin, D. G. Ast: Philos.Maq. A51, 449 (1985)CrossRefGoogle Scholar
  19. 19.
    A. Seeger. K. P. Chik: Phys.Stat.Sol. 29. 455 (1968)CrossRefGoogle Scholar
  20. 20.
    L. C. Kimerling: in Defects and radiation effects in semiconductors, 1978, ed. by J. H. Albany (Instituteof Physics, Bristol, 1979), p. 56.Google Scholar

Copyright information

© Springer-Verlag Berlin, Heidelberg 1989

Authors and Affiliations

  • J. Kątcki
    • 1
  • D. Ast
    • 2
  1. 1.Institute of Electron TechnologyWarsawPoland
  2. 2.Department of Materials Science and Engineering, Bard HallCornell UniversityIthacaUSA

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