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Analysis of the Polycrystalline Semiconducting Film Electrical Resistance Variation Due to Isothermal Desorption and Temperature Stimulated Desorption of Oxygen

  • B. Fortin
  • F. Raoult
  • G. Rosse
  • Y. Colin
  • M. El Khadir
Part of the Springer Proceedings in Physics book series (SPPHY, volume 35)

Abstract

The interaction of oxygen with several types of polycrystalline semiconducting films (polysilicon, CdSe, ZnO, oxynitrides) was studied. It shows itself in identical electrical conduction phenomena during isothermal adsorption/desorption and temperature programmed desorption (WD). A model is set up, which is based mainly on extensive experiments on CdSe films, that allows to analyse these phenomena and to relate their peculiarities to the energy states introduced in the semiconductor surface forbidden band by adsorbed oxygen.

Keywords

Isothermal Desorption Temperature Program Desorption Polysilicon Film Surface Electric Charge Longitudinal Electrical Resistance 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Bibliography

  1. 1.
    Th. Wolkenstein: In “Physico-chimie de la surface des semiconducteurs”, Ed. Mir. Moscow (1973)Google Scholar
  2. 2.
    W. Gopel: Prog, in Surface Science, 20 (1) 9 (1985)CrossRefGoogle Scholar
  3. 3.
    F. Raoult, B. Fortin, Y. Colin: submitted to Thin Solid FilmsGoogle Scholar
  4. 4.
    A. Many: CRC. Crit. Rev. in Solid State Science, Mai 515 (1974)Google Scholar
  5. 5.
    F. Raoult: Stat. Thesis of Phys., B. 254 Rennes, France (1987)Google Scholar
  6. 6.
    G. Rossé, B. Fortin, F. Raoult: Thin Solid Films 111, 175 (1984)CrossRefGoogle Scholar
  7. 7.
    B. Fortin, H. Larzul, J. Lebigot, F. Raoult, G. Rossé: Thin Solid Films 131, 51 (1985)CrossRefGoogle Scholar
  8. 8.
    B. Fortin: Stat. Thesis of Phys. Sci, B.253 Rennes, France (1987)Google Scholar
  9. 9.
    L. J. Brillson: Journ. Vacuum Sci., Technol. 13, 1, 325 (1976)CrossRefGoogle Scholar
  10. 10.
    T. T. Bykova, E. F. Lazneva: Zh. Tekh. Fiz. 51, 1, 168 (1981)Google Scholar
  11. 11.
    M. Ghers, G. Rossé, J. Guyader, Y. Laurent, Y. Colin: Sensors and Actuators, 13, 263 (1988)CrossRefGoogle Scholar

Copyright information

© Springer-Verlag Berlin, Heidelberg 1989

Authors and Affiliations

  • B. Fortin
    • 1
  • F. Raoult
    • 1
  • G. Rosse
    • 1
  • Y. Colin
    • 1
  • M. El Khadir
    • 1
  1. 1.Groupe de MicroélectroniqueUniversité de Rennes IRennes CedexFrance

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