Advertisement

Hydrogen Injection and Migration in Silicon

  • A. E. Jaworowski
Conference paper
Part of the Springer Proceedings in Physics book series (SPPHY, volume 35)

Abstract

Resonance depth profiling with 15N beams and in-situ capacitance-voltage profiling techniques were used to measure hydrogen concentration and migration in the near-surface of silicon. Spontaneous hydrogen injection into silicon has been discovered in samples exposed to room air, and also in the samples annealed in the vacuum of about 2×10E-6 Torr. Electric field drift experiments have shown a very fast in-bulk migration of positively charged hydrogen species. Short term reverse bias annealing results in shallow acceptor neutralization. The observed hydrogen injection appears to be a general effect and intrinsic property of the near-surface of silicon, and probably other semiconductors.

Keywords

Silicon Lattice Acceptor Neutralization Hydrogen Injection Hydrogen Layer Subsurface Hydrogen 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. 1.
    S.J. Pearton, J.W. Corbett and T.S. Shi; Appl.Phys. A43, 153 (1987)Google Scholar
  2. 2.
    C.H. Seager, R.A. Anderson and J.K.G. Panitz: J.Mat.Res. 2, 96 (1987)CrossRefGoogle Scholar
  3. 3.
    A.E. Jaworowski, L.S. Wielunski and T.W. Listerman: In Microscopic Identification of Electronic Defects in Semiconductors, ed. by N.M. Johnson, S.G. Bishop and G.D. Watkins, Mat.Res.Soc.Symp.Proc. Vol.46, 561 (MRS, New York 1985)Google Scholar
  4. 4.
    X.C. Mu, S.J. Fonash and K. Singh: Appl.Phys.Lett. 49, 67 (1986)CrossRefGoogle Scholar
  5. 5.
    A.J. Tavendale, A.A. Williams and S.J. Pearton: Appl.Phys.Lett. 48, 590 (1986)CrossRefGoogle Scholar
  6. 6.
    S.J. Pearton, A.J. Tavendale, A.A. Williams and D. Alexiev: In Semiconductor Silicon 1986, Electrochem.Soc.Proc. Vol.86–4, 826Google Scholar
  7. 7.
    A.J. Tavendale, A.A. Williams and S.J. Pearton: In Defects in Electronic Materials, ed. by M. Stavola, S.J. Pearton and G. Davies, Mat.Res.Soc.Symp. Proc. Vol.104, 285 (MRS, Pittsburgh 1988)Google Scholar
  8. 8.
    A.E. Jaworowski: Surf. Interface Anal. (to be published)Google Scholar
  9. 9.
    A.E. Jaworowski, J.H. Robison and S.R. Hayden: In Shallow Impurities in Semiconductors, The IOP Conf.Series (to be published)Google Scholar
  10. 10.
    A.E. Jaworowski: (to be published)Google Scholar
  11. 11.
    A.E. Jaworowski: In Proc. 19th ICPS Warsaw.(DHN Ltd., Warsaw 1989)Google Scholar
  12. 12.
    A.E. Jaworowski, L.W. Wielunski and G. Bambakidis: In Oxygen,Carbon,Hydrogen and Nitrogen in Crystalline Solids, ed. by J.M. Mikkelsen, Jr., S.J. Pearton, J.W. Corbett and S.J. Pennycook, Mat.Res.Soc.Symp.Proc.Vol.59, 501 (MRS,1986)Google Scholar
  13. 13.
    A.E. Jaworowski and L.S. Wielunski: In Defects in Electronic Materials, ed. by M. Stavola, S.J. Pearton and G. Davies, Mat.Res.Soc.Symp. Proc. Vol.104, 285 (MRS, Pittsburgh 1988), p.305Google Scholar
  14. 14.
    G. Amsel, C. Cohen and B. Maurel: Nucl.Instrum.Methods B14, 226 (1986)Google Scholar
  15. 15.
    D.A. Leich and T.A. Tombrello: Nucl.Instrum.Methods 108, 67 (1973)CrossRefGoogle Scholar
  16. 16.
    W.A. Lanford: Nucl.Instrum.Methods 149, 1 (1978)CrossRefGoogle Scholar
  17. 17.
    A. Mainwood and A.M. Stoneham, Physica 116B, 101 (1983);Google Scholar
  18. 17a.
    A. Mainwood and A.M. Stoneham, J.Phys.C. Solid State Phys. 17, 2513 (1984)CrossRefGoogle Scholar
  19. 18.
    J.W. Corbett, S.N. Sahu, T.S. Shi and L.C. Snyder: Phys. Lett. 93A, 303 (1983)Google Scholar
  20. 19.
    T. Zundel, E. Courcelle, A. Mesli, J.C. Müller and P. Siffert: Appl.Phys. A40, 67 (1986)Google Scholar
  21. 20.
    J.H. Robison and A.E. Jaworowski: Bull.Am.Phys.Soc. 33, 1250 (1988)Google Scholar
  22. 21.
    A. Van Wieringen and N Warmoltz: Physics 22, 849 (1956)Google Scholar
  23. 22.
    N.M. Johnson: In Proc. 19th ICPS Warsaw, (DHN Ltd., Warsaw 1989)Google Scholar
  24. 23.
    A.M. Stoneham and P.W. Tasker: Semicond.Sci.Technol. 1, 93 (1986)CrossRefGoogle Scholar
  25. 24.
    J.I. Pankove (private communication)Google Scholar
  26. 25.
    S.T. Pantelides: In 15th ICPS Budapest (to be published 1989)Google Scholar

Copyright information

© Springer-Verlag Berlin, Heidelberg 1989

Authors and Affiliations

  • A. E. Jaworowski
    • 1
  1. 1.Physics DepartmentWright State UniversityDaytonUSA

Personalised recommendations