Hydrogen Injection and Migration in Silicon

  • A. E. Jaworowski
Conference paper
Part of the Springer Proceedings in Physics book series (SPPHY, volume 35)


Resonance depth profiling with 15N beams and in-situ capacitance-voltage profiling techniques were used to measure hydrogen concentration and migration in the near-surface of silicon. Spontaneous hydrogen injection into silicon has been discovered in samples exposed to room air, and also in the samples annealed in the vacuum of about 2×10E-6 Torr. Electric field drift experiments have shown a very fast in-bulk migration of positively charged hydrogen species. Short term reverse bias annealing results in shallow acceptor neutralization. The observed hydrogen injection appears to be a general effect and intrinsic property of the near-surface of silicon, and probably other semiconductors.


Silicon Lattice Acceptor Neutralization Hydrogen Injection Hydrogen Layer Subsurface Hydrogen 
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Copyright information

© Springer-Verlag Berlin, Heidelberg 1989

Authors and Affiliations

  • A. E. Jaworowski
    • 1
  1. 1.Physics DepartmentWright State UniversityDaytonUSA

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