Abstract
Resonance depth profiling with 15N beams and in-situ capacitance-voltage profiling techniques were used to measure hydrogen concentration and migration in the near-surface of silicon. Spontaneous hydrogen injection into silicon has been discovered in samples exposed to room air, and also in the samples annealed in the vacuum of about 2×10E-6 Torr. Electric field drift experiments have shown a very fast in-bulk migration of positively charged hydrogen species. Short term reverse bias annealing results in shallow acceptor neutralization. The observed hydrogen injection appears to be a general effect and intrinsic property of the near-surface of silicon, and probably other semiconductors.
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Jaworowski, A.E. (1989). Hydrogen Injection and Migration in Silicon. In: Möller, H.J., Strunk, H.P., Werner, J.H. (eds) Polycrystalline Semiconductors. Springer Proceedings in Physics, vol 35. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-93413-1_18
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DOI: https://doi.org/10.1007/978-3-642-93413-1_18
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