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Atomic Hydrogen Passivation Studies of Microcrystalline Phases in Ion-Implant Damaged Surface Layers of Silicon

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Polycrystalline Semiconductors

Part of the book series: Springer Proceedings in Physics ((SPPHY,volume 35))

Abstract

Electrical evidence for the presence of microcrystallites in Ar ion implanted crystalline Si. Low-temperature carrier transport across Schottky barriers tend to confirm high-resolution TEM results reported on ion- implanted Si. Further evidence is obtained from the apparent passivation of the microcrystalline grain boundaries by atomic hydrogen.

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Author information

Authors and Affiliations

  1. Institute of Electronics, National Chiao-Tung University, Hsin-chu, Taiwan

    H.-C. Chien

  2. Center for Electronic Materials and Devices, The Pennsylvania State University, University Park, PA, 16802, USA

    K. Srikanth, S. Ashok & M.-C. Chen

Authors
  1. H.-C. Chien
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  2. K. Srikanth
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  3. S. Ashok
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  4. M.-C. Chen
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Editor information

Editors and Affiliations

  1. Department of Materials Science and Engineering, Case Western Reserve University, Cleveland, OH, 44106, USA

    Hans J. Möller

  2. Technische Universität Hamburg-Harburg, D-2100, Hamburg 90, Fed. Rep. of Germany

    Horst P. Strunk

  3. Max-Planck-Institut für Festkörperforschung, Heisenbergstr. 1, D-7000, Stuttgart 80, Fed. Rep. of Germany

    Jürgen H. Werner

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© 1989 Springer-Verlag Berlin, Heidelberg

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Chien, HC., Srikanth, K., Ashok, S., Chen, MC. (1989). Atomic Hydrogen Passivation Studies of Microcrystalline Phases in Ion-Implant Damaged Surface Layers of Silicon. In: Möller, H.J., Strunk, H.P., Werner, J.H. (eds) Polycrystalline Semiconductors. Springer Proceedings in Physics, vol 35. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-93413-1_17

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  • DOI: https://doi.org/10.1007/978-3-642-93413-1_17

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-93415-5

  • Online ISBN: 978-3-642-93413-1

  • eBook Packages: Springer Book Archive

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