On the Influence of the Cottrell Atmosphere on the Recombination Losses at Grain Boundaries in Polycrystalline Silicon

  • S. Pizzini
  • F. Borsani
  • A. Sandrinelli
  • D. Narducci
  • M. Anderle
  • R. Canteri
Conference paper
Part of the Springer Proceedings in Physics book series (SPPHY, volume 35)

Abstract

The influence of oxygen, carbon and boron segregation at grain boundaries and twin boundaries on the electrical activity of these defects has been investigated and demonstrated using SIMS, EBIC and LBIC measurements. It appears that invariably carbon and boron segregation induces strong electrical activity on extended defects, while simultaneous oxygen and carbon segregation or the sole oxygen segregation induces a variety of electrical effects, like bright contrast or double maxima figures. A preliminary discussion of these results is given.

Keywords

Dioxide Carbide Recombination Boron Carbon Monoxide 

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Copyright information

© Springer-Verlag Berlin, Heidelberg 1989

Authors and Affiliations

  • S. Pizzini
    • 1
  • F. Borsani
    • 1
  • A. Sandrinelli
    • 1
  • D. Narducci
    • 1
  • M. Anderle
    • 2
  • R. Canteri
    • 2
  1. 1.Department of Physical Chemistry and ElectrochemistryMilanoItaly
  2. 2.IRSTPovo-TrentoItaly

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