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Electron Beam Induced Current Contrast and Transmission Electron Microscopy Analysis of Special Grain Boundaries in Silicon

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Polycrystalline Semiconductors

Part of the book series: Springer Proceedings in Physics ((SPPHY,volume 35))

Abstract

Correlations between electrical activity and microstructure in special silicon grain boundaries are presented. EBIC and TEM were performed on the same samples. Three examples of special silicon grain boundaries (Σ = 3, 5, 25) are presented where TEM has been carried out on zones previously characterized by EBIC. In the Σ = 3 case, electrical activity arises when both possible twin planes ({111} and {112}) are present, it is associated with some of the dislocations separating these planes. In the Σ = 5 case, electrical activity is related to the secondary dislocation core structure. In the Σ = 25 case, it has no obvious relation with structure. EBIC-contrast is enhanced by annealing in all cases. Microanalysis of the Z = 25 shows that copper and nickel-based precipitates are implicated in that increase.

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Author information

Authors and Affiliations

  1. Laboratoire de Physique des Matériaux, CNRS, 1, place A. Briand, F-92195, Meudon, France

    J.-L. Maurice

  2. Laboratoire de Physique des Solides, Université Paris-Sud, F-91405, Orsay, France

    C. Colliex

Authors
  1. J.-L. Maurice
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  2. C. Colliex
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Editor information

Editors and Affiliations

  1. Department of Materials Science and Engineering, Case Western Reserve University, Cleveland, OH, 44106, USA

    Hans J. Möller

  2. Technische Universität Hamburg-Harburg, D-2100, Hamburg 90, Fed. Rep. of Germany

    Horst P. Strunk

  3. Max-Planck-Institut für Festkörperforschung, Heisenbergstr. 1, D-7000, Stuttgart 80, Fed. Rep. of Germany

    Jürgen H. Werner

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© 1989 Springer-Verlag Berlin, Heidelberg

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Maurice, JL., Colliex, C. (1989). Electron Beam Induced Current Contrast and Transmission Electron Microscopy Analysis of Special Grain Boundaries in Silicon. In: Möller, H.J., Strunk, H.P., Werner, J.H. (eds) Polycrystalline Semiconductors. Springer Proceedings in Physics, vol 35. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-93413-1_11

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  • DOI: https://doi.org/10.1007/978-3-642-93413-1_11

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-93415-5

  • Online ISBN: 978-3-642-93413-1

  • eBook Packages: Springer Book Archive

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