Abstract
Gas cluster ion beams are found to offer a number of new arid important opportunities for processing of materials. Ultrashallow ion implantation by cluster ion beams has been demonstrated experimentally and confirmed by molecular dynamics simulations. Very high-rate sputtering, with sputtering yields of one or two orders of magnitude greater than those produced by monomer ion beams, has also been studied in detail. Surfaces sputtered by cluster ion beams become smoother when physical sputtering is provided by nonreactive gas species, but chemical sputtering by reactive gases does not produce the same reduction in roughness effect. The smoothing effects produced by cluster ions cannot be produced by monomer ion beams. Unique bombarding characteristics of cluster ion beams have been applied to the formation of source/drain shallow junctions for 40 nm p-MOSFETs, to high-yield etching and surface smoothing of Si, YBCO, diamond, and SiC substrates, and to the production of electronic and optical devices, A low-temperature thin-film formation technique by cluster ion-assisted deposition has also been developed for high-quality oxide films. This paper reviews recent equipment development and discusses several new applications.
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I. Yamada: Proceedings of the 14 th Sou. on /cm So,urces arid Ion-Assisted Technology, Tokyo, The Ion Engineering Society of Ja,pan, Tokyo, 1991, p. 227
I. Yamada, J. Matsuo: Materials Research Society Symposium, Proceedings, Vol. 396, °Ion Solid Interactions for Materials Modification and Processing“, ed. by D.B. Pucker, D. Illa, Y-T. Gheng, L.R. Harriott, T.W. Sig,mon, 1995 ( Materials Research Society, Pittsburgh 1996 ) pp. 140–154
I. Yamada, J. Matsuo: Materials Research Society Symposium Proceedings, Vol. 427, “Advanced metallization for Future ULSI”, ed. by K.N. Tu, J.M. Poate, J.W. Mayer, L.C. Chen, 1996 ( Materials Research Society, Pittsburgh 1997 ) pp. 265–276
I. Yamada, J. 1\-latsuo E.C. Jones, D. Tokeuchi, T. Aoki, K. Coto, T, Sugii: Materials Research Sc e ntp Sym,posium Proceedings, Vol. 438, ’Materials Modification and,Synthèsis by Ion Beam Processing“, ed. by D. Alexander, B. Park, N. Cheung, W. Skorupa, 1996 ( Materials Research Society, Pittsburgh 1997 ) pp. 368–374
The name of this project is the Japan Science and Technology Corporation, Exploitation and Application Study Program “Gas cluster ion beam processing for high performance surface treatment”; the project leader is I. Yamada
K. Goto, J. Matsu°, T. Sugii, Minakata, I. Yamada, T. Hisatugu: IEDM Tech. Dig. 435 (1996)
K. Goto, J. Matsuo, Y. Tada, T. Tanaka, Y. Momivama, T. Sugii, I. Yamada: IEDM Tech. Dig. 471 (1997)
W.K. Chu, Y.P. Li, J.R. Liu, J.Z. Wu, S.C. TidroW, N. Toy- toda, J. Matsuo, I. Yamada: Appl. Phys. Lett. 72, 246 (1998)
A. Nishiyamo,, M. Adachi: Abstracts for the Fifteenth In- 18. ternational Conference on ath Application of Accelerators in Research Industry, Session GA chaster beam: Indus- 19. trial Applications, Paper GA4, will be published in the Proc. Application of Accelerators in Research and Industry’96, ed. by IL. Duggan, I.L. Morgan (AIP Press, New 20. York 1998). Proceedings of the Application of Accelerators in Research and Industry’96 (AIP Press, New York) 21. pp. 421–424
H. Katsuinata: Abstracts for the Fifteenth International Conference on ath Application of Industrial Applications, Paper GAT, will he published in the Proceedings of the Application of Accelerators in Research and Industry’96, ed. 23. by J.L. Duggan, I.L. Morgan (AIP Press, NEW York 1998 ) pp. 409–412
Developed by Epion Corp, (4R Alfred circle, Bedford. Mass, 01730, USA)
N. Toyoda, M. Saito, N. Hagiwara, J. Matsuo, I. Yamada: IEEE Proceedings of the 12th International Conference On 95, Ion Implantation Technology,Kyoto, Japan, 1998 (IEEE Service center, Piscataway, NJ) in press 26.
M. Saito, N. Hagiwara, N. Toyoda, J. Matsuo, I. Yamada, IEEE PrOC, 12th International Conference on Ion Implantation Technology,Kyoto, Japan, 1998 (IEEE Service center. Piscataway, NJ) in press
T. Aoki, N. Shimada, D. Takeuchi, J. ‘Matsuo, Z. Insepov, I. Yamada: Nucl. Instrum. Methods B 121, 49 (1997)
J. Matsuo, D. Takeuchi, T. Aoki, I. Yamada: IEEE Proc, 11th International Conference on Ion Implantation Tech- 28. nology, Anstin. TX, 1996 (IEEE Service center, Piscataway, NJ 1997) vol. 1, issue 1, p. 768 29.
D. Takeuchi, N. Shimada, J. Matsuo, I Yamada: IEEE 30. Proc. 11th International Conference on Ion Implantation Technology, ed. by E. Ishida, S. Banerjee, S. Meta, T.C. Smith, M. Current, L. Larson, A. lash, Austin, TX, 1996 (IEEE Service center, Piscataway, NJ 1997) vol. 1, 31. issue 1, p. 772
K.S. Jones, G.A. Rozgonyi: in Rapid Thermal Processing Science and Technology, ed. by R.B. Fair Academic Press, Boston 1993 ) p. 123
M. Rodder, Q.Z. Hong, M. Nandakumar, S. Aur, J.C. Hu, I-C, Chen: IEDLI Tech. Dig. 563 (1996)
M. Bohr, S.S. Ahmed, S.U. Ahmed, M. Bost, TR. Ghani, Greason, R. Hainsey, C. Jan, P. Packan, S. Sivakumar
S. Thompson, S. Yang: IEDM Tech. Dig. 8–17 (1996)
E.L. Hu, C.-H. Chen, D.E. Green: J. Vac. Sci. Technol. B 14, 3632 (1996)
G.S. Oehrlein, R.M. Tromp, J.C. Tsang, Y.H. Lee, E.J. Petrillo: J. Electrochem. Soc. 132, 1441 (1985)
K.F. Schuegraf, C.M. Hu: Proceedings of the IEEE International Reliability Physics Synip.,San Jose, CA 1994, Ti. 126
N. Toyoda, J. Matsuo. Yamada:.Proccedings of the.4pplication of Accelerators in Research and Industry ‘86, ed. by J.L. Duggan, IL. Morgan ( AIP Press, New York 1997 ) pp. 483–486
T. Aoki, J. lvlatsuo Z. Insepov, I. Yamada: Nucl. Instrum. Methods B 121, 49 (1997)
Z. Insepov, I. Yamada: Nucl. Instrum. Methods B 121, 41 (1997)
Z. Insepov, 1. Yamada, M. Sosncwski: Paper presented at the American Vacuum Society ‘86 Fall Meeting Philadelphia, October 14–18, 1996; Z. Insepov, 1. Yamada, M. Sosnowski: J. Vat:, Sci. Technol. A 15 (3), 981 (1997)
Z. Insepov, M. Sosnowski, I Yamada: in Laser and ion Beam Modification of Materials, ed. by I. Yamada et al. Trans. Mater. Res. Soc. Jpn. 17, 111 ( 1994 ) ( Elsevier, Amsterdam 1994 )
Z. Insepov, I. Yamada: Nucl Instrum. Methods 99, 248 (1995)
Y. Kitazoe, Y. Yamamura: Radiat. EEL Lett. 50, 39 (1980) NEDO Consortium program, 1997; project office: Osaka Science and Technology Center, Utsubo, Osaka, Japan; project: “11,:D for ultrahigh quality transparent conductive film fabrication”; project leader: I. Yamada
E. Minami, W. Qin, M. Akizuki, H. Katsumata, J. Matsuo, 1, Yamada: IEEE Proceedings of the 12th ‘international conference on. Ion Implantation Technology,Kyoto, Japan. June 22–26, 1998 (IEEE Service center, Piscataway NJ) in press
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Yamada, I. (1999). Novel materials processing and applications by gas cluster ion beams. In: Châtelain, A., Bonard, JM. (eds) The European Physical Journal D. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-88188-6_12
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DOI: https://doi.org/10.1007/978-3-642-88188-6_12
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