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Combined SIMS-AES-XPS Investigation of the Composition and Interface Structure of Anodic Oxide Layers on Cd0.2Hg0.8Te (CMT)

  • U. Kaiser
  • O. Ganschow
  • J. Neelsen
  • H. M. Nitz
  • L. Wiedmann
  • A. Benninghoven
Conference paper
Part of the Springer Series in Chemical Physics book series (CHEMICAL, volume 19)

Abstract

Because of its small band gap, cadmium mercury telluride (CMT) is widely used as a material for IR detectors. The constancy and long-time stability of its composition, as well as a low impurity concentration are the crucial requirements for successful applications of this semiconductor. Anodic oxide layers are frequently used for passivation of the CMT surface. In the present investigation, the surface and in-depth composition of anodic oxide layers with different thickness from 20 to 230 nm on Cd0.2Hg0.8Te has been characterized by quasi simultaneous secondary ion mass spectrometry (SIMS), Auger electron spectroscopy (AES), and X-ray photoelectron spectroscopy (XPS).

Keywords

Auger Electron Spec High Oxidation State Cadmium Mercury Telluride Auger Electron Spec Tellurium Oxide 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag Berlin Heidelberg 1982

Authors and Affiliations

  • U. Kaiser
    • 1
  • O. Ganschow
    • 1
  • J. Neelsen
    • 1
  • H. M. Nitz
    • 1
  • L. Wiedmann
    • 1
  • A. Benninghoven
    • 1
  1. 1.Physikalisches InstitutUniversität MünsterMünsterFed. Rep. of Germany

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