Quantitative Distribution Analysis of B, As and P in Si for Process Simulation

  • M. Grasserbauer
  • G. Stingeder
  • E. Guerrero
  • H. Pötzl
  • R. Tielert
  • H. Ryssel
Part of the Springer Series in Chemical Physics book series (CHEMICAL, volume 19)

Abstract

For the development and improvement of process simulation accurate information about the (depth) distribution of dopant elements (electrically active fraction and total elemental concentration) as a function of process parameters has to be obtained. The analytical requirements for distribution analysis as applied for process simulation are stringent:
  1. i)

    high precision and accuracy

     
  2. ii)

    high detection power and large dynamic rage (concentra-tion range of interest: 1014–5·1021 at/cm3)

     
  3. iii)

    high depth resolution (shallow p/n-structures in modern devices)

     

Keywords

Arsenic Boron Resis Active Element 

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Copyright information

© Springer-Verlag Berlin Heidelberg 1982

Authors and Affiliations

  • M. Grasserbauer
    • 1
  • G. Stingeder
    • 1
  • E. Guerrero
    • 1
    • 2
    • 3
    • 4
  • H. Pötzl
    • 1
    • 2
    • 3
    • 4
  • R. Tielert
    • 5
  • H. Ryssel
    • 1
    • 6
  1. 1.Institute for Analytical ChemistryTechnical University ViennaA - WienAustria
  2. 2.Department of Physical ElectronicsInstitute of General Electrical EngineeringA - WienAustria
  3. 3.Electronics, Technical University ViennaA - WienAustria
  4. 4.Solid State PhysicsLudwigBolzmann-InstituteA - WienAustria
  5. 5.Siemens AGCentral Research LaboratoriesMünchenFed. Rep. of Germany
  6. 6.Institute for Solid State TechnologyFraunhofer GesellschaftMünchenFed. Rep. of Germany

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