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Depth Profiling of Copper Atoms Gettered in Ion-Damaged GaP

  • M. Griepentrog
  • H. Kerkow
  • H. Klose
  • U. Müller-Jahreis
Conference paper
Part of the Springer Series in Chemical Physics book series (CHEMICAL, volume 19)

Abstract

The gettering process was introduced in the field of semiconductor technology by SHOCKLEY and GOETZBERGER [1]. The designation “gettering” comes from the valve technology. Gettering processes in semiconductors include
  1. (i)

    the binding of unwished-for electrically active impurities and/or crystal defects into electrically inactive complexes

     
  2. (ii)

    the outdiffusion of metal atoms from space charge regions into surface layers and into interfaces

     
  3. (iii)

    the outdiffusion of dopants or the addition of atoms to bind unwished-for electrically active atoms.

     

Keywords

Depth Profile Copper Atom Space Charge Region Damage Profile Valve Technology 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. 1.
    A. Goetzberger and W. Shockley, Journ. Appl. Phys. 31, 1821 (1960); W. Shockely, Solid State El. 2, 35 (1961)Google Scholar
  2. 2.
    R. Kevasan et al., J, Electrochem. Soc. 126, 642 (1979)CrossRefGoogle Scholar
  3. 3.
    T. Saitoh et al., IEEE Trans. El. Dev. ED-27 671 (1980)ADSCrossRefGoogle Scholar
  4. 4.
    B. Wessels, El. Letters 15, 748 (1979)CrossRefGoogle Scholar
  5. 5.
    J. Auth, Berichte Humboldt Universität zu Berlin (to be published)Google Scholar
  6. 6.
    T.M. Buck et al., Appl. Phys. Letters 21, 485 (1972)ADSCrossRefGoogle Scholar
  7. 7.
    C.M. Hsieh et al., Appl. Phys. Letters 22, 238 (1973)ADSCrossRefGoogle Scholar
  8. 8.
    M. Schneider and E. Nebauer, Phys. Stat Sol. (a) 46, K71 (1978)ADSCrossRefGoogle Scholar
  9. 9.
    H. Klose et al., phys. Stat. Sol. (a) 16, K39 (1973)ADSCrossRefGoogle Scholar
  10. 10.
    C.T. Sah and C.T. Wang, Journ. Appl. Phys. 46, 1767 (1975)ADSCrossRefGoogle Scholar
  11. 11.
    T.J. Magee et al., Appl. Phys. Letters 37, 53 (1980)ADSCrossRefGoogle Scholar
  12. 12.
    P.C. Mürau and R.N. Bhargava, J. Electrochem. Soc. 123, 728 (1976)CrossRefGoogle Scholar
  13. 13.
    H. Klose and M. Rieth, Phys. Stat. Sol. (a) 66, (1981)Google Scholar

Copyright information

© Springer-Verlag Berlin Heidelberg 1982

Authors and Affiliations

  • M. Griepentrog
    • 1
  • H. Kerkow
    • 1
  • H. Klose
    • 1
  • U. Müller-Jahreis
    • 1
  1. 1.Humboldt-Universität zu BerlinBerlinGermany

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