Depth Profiling of Copper Atoms Gettered in Ion-Damaged GaP

  • M. Griepentrog
  • H. Kerkow
  • H. Klose
  • U. Müller-Jahreis
Conference paper
Part of the Springer Series in Chemical Physics book series (CHEMICAL, volume 19)


The gettering process was introduced in the field of semiconductor technology by SHOCKLEY and GOETZBERGER [1]. The designation “gettering” comes from the valve technology. Gettering processes in semiconductors include
  1. (i)

    the binding of unwished-for electrically active impurities and/or crystal defects into electrically inactive complexes

  2. (ii)

    the outdiffusion of metal atoms from space charge regions into surface layers and into interfaces

  3. (iii)

    the outdiffusion of dopants or the addition of atoms to bind unwished-for electrically active atoms.



Depth Profile Copper Atom Space Charge Region Damage Profile Valve Technology 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


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Copyright information

© Springer-Verlag Berlin Heidelberg 1982

Authors and Affiliations

  • M. Griepentrog
    • 1
  • H. Kerkow
    • 1
  • H. Klose
    • 1
  • U. Müller-Jahreis
    • 1
  1. 1.Humboldt-Universität zu BerlinBerlinGermany

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