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Comparison of Compositional Thin Film Depth Profiling Obtained by SIMS, IIR and AES

  • E. Hauser
  • G. Hobi
  • K. H. Guenther
  • E. Brandstaetter
Part of the Springer Series in Chemical Physics book series (CHEMICAL, volume 19)

Abstract

Ion etching used in connection with surface-sensitive analytical techniques is a common method of determining the chemical composition of thin films and substrates. The method of surface analysis employed depends on the aims of the investigations and the information required. In this paper the advantages and limitations of AES, SIMS and IIR for the analysis of dielectric materials will be discussed. Each of the three analytical methods has been employed for parallel compositional investigations in a broad-band antireflection coating as well as in a dichroic beamsplitter.

Keywords

Depth Profile Etching Time Cylindrical Mirror Analyzer Recoil Implantation Elemental Depth Profile 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. 1.
    K.H. Guenther, E. Hauser, G. Hobi, P.G. Wierer and E. Brandstaetter, these ProceedingsGoogle Scholar
  2. 2.
    A detailed description is given by H. Bach, Beitr. Elektronenmikroskop. Direktabb. Oberfl. 12/1 277 (1979)Google Scholar
  3. 3.
    R. Kelly and N.Q. Lam, Radiat. Eff. 19, 39 (1973)CrossRefGoogle Scholar

Copyright information

© Springer-Verlag Berlin Heidelberg 1982

Authors and Affiliations

  • E. Hauser
    • 1
  • G. Hobi
    • 1
  • K. H. Guenther
    • 1
  • E. Brandstaetter
    • 2
  1. 1.BALZERS AGBalzersFürstentum Liechtenstein
  2. 2.On leave from Institut für Werkstoffprüfung und MetallkundeMontanuniversitätLeobenAustria

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