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Surface Metal-Oxide-Silicon-Oxide-Metal Picosecond Photodetector

  • S. Thaniyavarn
  • T. K. Gustafson
Conference paper
Part of the Springer Series in Chemical Physics book series (CHEMICAL, volume 23)

Abstract

Recently there has been increased effort on the development of high speed photodetectors with ultimate response time down to the picosecond range. We have recently implemented a metaloxide-silicon-oxide-metal junction photodetector having a surface structure as shown diagrammatically in Figure la [1]. The device has a relatively large circular optically sensitive area. A dark current of less than 1 nA at under 20 V bias, and a responsivity of the order 1/2 mA/mW at the cw He-Ne laser wavelength (6328 A) has been observed. The device has a fast response time with a rise and fall time of about 50 psec.

Keywords

Dark Current Interdigitated Electrode Minority Electron Thermionic Emission Current Oxide Buffer Layer 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

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Copyright information

© Springer-Verlag Berlin Heidelberg 1982

Authors and Affiliations

  • S. Thaniyavarn
    • 1
  • T. K. Gustafson
    • 1
  1. 1.Electronics Research LaboratoryUniversity of CaliforniaBerkeleyUSA

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