Surface Metal-Oxide-Silicon-Oxide-Metal Picosecond Photodetector
Recently there has been increased effort on the development of high speed photodetectors with ultimate response time down to the picosecond range. We have recently implemented a metaloxide-silicon-oxide-metal junction photodetector having a surface structure as shown diagrammatically in Figure la . The device has a relatively large circular optically sensitive area. A dark current of less than 1 nA at under 20 V bias, and a responsivity of the order 1/2 mA/mW at the cw He-Ne laser wavelength (6328 A) has been observed. The device has a fast response time with a rise and fall time of about 50 psec.
KeywordsDark Current Interdigitated Electrode Minority Electron Thermionic Emission Current Oxide Buffer Layer
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