Picosecond, 1.06 Micron Laser-Induced Amorphous Phases in Thin, Single Crystal Silicon Membranes

  • M. F. Becker
  • R. M. Walser
  • J. G. Ambrose
  • D. Y. Sheng
Part of the Springer Series in Chemical Physics book series (CHEMICAL, volume 14)

Abstract

Recent reports of laser-induced amorphous phases in crystalline silicon due to picosecond 532nm and 266nm radiation [1] and nanosecond 266nm radiation [2] raise questions regarding the dynamics of such a transition. These results may not be adequately described by equilibrium heat-flow analysis for several reasons.

Keywords

Black Body Radiation Small Ridge 266nm Radiation Laser Beam Profile Optical Absorption Transient 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

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Copyright information

© Springer-Verlag Berlin Heidelberg 1980

Authors and Affiliations

  • M. F. Becker
    • 1
  • R. M. Walser
    • 1
  • J. G. Ambrose
    • 1
  • D. Y. Sheng
    • 1
  1. 1.Department of Electrical EngineeringThe University of Texas at AustinAustinUSA

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