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An Accurate Expression for the Noise Figure of Bipolar Transistors Including Crowding Effect

  • J. Caminade
  • G. Le Gac
  • G. Blasquez
Conference paper
Part of the Springer Series in Electrophysics book series (SSEP, volume 2)

Abstract

Base thermal noise greatly influences the minimum noise Figure Fmin. In commonly used noise models the resistive behaviour of the active base is simulated by a series resistance rBB’, and its associated noise source is of Nyquist’s type. These models do not take into account crowding effects. However, it has been previously shown that this effect appears to be significant for low biasing conditions at high frequencies [1]. In this paper the influence of crowding is analyzed.

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References

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Copyright information

© Springer-Verlag Berlin Heidelberg 1978

Authors and Affiliations

  • J. Caminade
    • 1
    • 2
  • G. Le Gac
    • 1
  • G. Blasquez
    • 1
  1. 1.Laboratoire d’Automatique et d’AnalyseSystèmes du Centre National de la Recherche ScientifiqueToulouseFrance
  2. 2.Université Paul Sabatier de ToulouseToulouseFrance

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