1/f-Noise in Indium Antimonide

Abstract

In the present paper we deal with the 1/f noise in samples of inhomogeneous single-crystal and polycrystaline indium antimonide. The theory of HOOGE [1] gives the well known relation for the spectral density S_i of the current noise:

$$ S_i = \frac{{a_o I^2 }} {{fn}} $$

(1)

The HOOGE’s parameter α_o is considered to be constant for a wide range of conducting and semiconducting materials and independent of temperature. The value of α_o as given by HOOGE is 2 × 10⁻³. VANDAMME [2] reports for single crystals of InSb the value of α_o from 10⁻³ to 7 × 10⁻³. From (1) it is evident that thespectral density S_i depends only on the total number of carriers N in the sample. HOOGE points out, however, that (1) holds only for homogeneous samples.