Effect of Hot Carriers on the Thermal Noise of p-Type Silicon and in SCLC Single Injection Diodes

  • J. P. Nougier
  • D. Gasquet
  • J. C. Vaissiere
  • H. R. Bilger
Part of the Springer Series in Electrophysics book series (SSEP, volume 2)

Abstract

The noise in single injection space charge limited current (SCLC) diodes has been studied by several authors [1],[2]. It is shown that the noise voltage spectral density can be expressed, at frequencies below the reciprocal transit time, as
$$ S_V \left( f \right) = 8KT\frac{{dU}} {{dI}}, $$
(1)
where T is the lattice temperature. With the usual definition of the noise temperature TN
$$ S_V \left( f \right) \equiv 4KT_N \operatorname{Re} \left\{ Z \right\}, $$
(2)
the equivalent noise temperature TN of the device, at low frequencies, is TN = 2T.

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References

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Copyright information

© Springer-Verlag Berlin Heidelberg 1978

Authors and Affiliations

  • J. P. Nougier
    • 1
  • D. Gasquet
    • 1
  • J. C. Vaissiere
    • 1
  • H. R. Bilger
    • 1
    • 2
  1. 1.Centre d’Etudes d’Electronique des Solides, associé au C.N.R.S.Université des Sciences et Techniques du LanguedocMontpellier CédexFrance
  2. 2.Oklahoma State UniversityUSA

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