Effect of Hot Carriers on the Thermal Noise of p-Type Silicon and in SCLC Single Injection Diodes

Abstract

The noise in single injection space charge limited current (SCLC) diodes has been studied by several authors [1],[2]. It is shown that the noise voltage spectral density can be expressed, at frequencies below the reciprocal transit time, as

$$ S_V \left( f \right) = 8KT\frac{{dU}} {{dI}}, $$

(1)

where T is the lattice temperature. With the usual definition of the noise temperature T_N

$$ S_V \left( f \right) \equiv 4KT_N \operatorname{Re} \left\{ Z \right\}, $$

(2)

the equivalent noise temperature T_N of the device, at low frequencies, is T_N = 2T.