Non-Ohmic Transport Fluctuations in Semiconductors

  • R. J. J. Zijlstra
Part of the Springer Series in Electrophysics book series (SSEP, volume 2)


Non-ohmic transport in homogeneous semiconducting materials is caused by the fact that the carrier mobilities, the carrier densities and/or phonon distributions become field dependent. Then the electric current density is no longer proportional to the electric field strength and as a consequence Ohm’s law does not hold. In some cases current can become sublinear or superlinear on electric field, but there are more extreme cases in which either the current becomes a decreasing function of electric field strength or an increase in current is accompanied by a decrease in the required field strength, thus giving rise to a negative differential resistance. We shall restrict ourselves to devices with stable modes of operation and exclude unstable ones (e.g. Gunn and Read diodes).


Electric Field Strength Drift Velocity Velocity Fluctuation Solid State Electronics Negative Differential Resistance 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


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Copyright information

© Springer-Verlag Berlin Heidelberg 1978

Authors and Affiliations

  • R. J. J. Zijlstra
    • 1
  1. 1.Department of PhysicsRijksuniversiteit UtrechtUtrechtThe Netherlands

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