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A Burst Noise Model for Integrated Bipolar Transistors with Anomalous I–V Characteristics

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Noise in Physical Systems

Part of the book series: Springer Series in Electrophysics ((SSEP,volume 2))

Abstract

A burst noise model for integrated transistors is presented. The occurence of burst noise is related to the current flow through a small region with reduced band gap connected in parallel to the base-emitter junction. The current through this bypass is modulated by changes in the charge state of a trap in a similar manner as proposed by HSU et al.. Furthermore it is shown that the reduced band gap region may produce kinks in the I–V characteristics of the transistors.

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References

  1. S.T. Hsu et al., Physical Model for Burst Noise in Semiconductor Devices, Solid-St.Electron, Vol. 13, 1055 (1970).

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Author information

Authors and Affiliations

  1. Institut für Niederfrequenztechnik, Technische Universität Wien, Gusshausstraße 25, A-1040, Wien, Austria

    Gerhard Doblinger

Authors
  1. Gerhard Doblinger
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Editor information

Editors and Affiliations

  1. Institut für Angewandte Physik, Universität Frankfurt, Robert-Mayer-Strasse 2-4, D-6000, Frankfurt a. M. 1, Fed. Rep. of Germany

    Dietrich Wolf

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© 1978 Springer-Verlag Berlin Heidelberg

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Doblinger, G. (1978). A Burst Noise Model for Integrated Bipolar Transistors with Anomalous I–V Characteristics. In: Wolf, D. (eds) Noise in Physical Systems. Springer Series in Electrophysics, vol 2. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-87640-0_11

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  • DOI: https://doi.org/10.1007/978-3-642-87640-0_11

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-87642-4

  • Online ISBN: 978-3-642-87640-0

  • eBook Packages: Springer Book Archive

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