Study of Phonon Pulse Propagation in Silicon and the Effect of N-Processes
We have studied the propagation of heat pulses in Si (111) between 18 K and 32 K. In this transition region from ballistic to diffusive propagation the ballistic peaks are decreasing rapidly with increasing temperature. However, there is no pronounced maximum of diffusive phonons but a slow monotonous decay. This behavior is described by a Monte Carlo simulation assuming N-processes (1/τ NL α ω 2T3 and 1/τ NT α ω T4) in the presence of strong isotope scattering (1/τ i α ω 4).
KeywordsTate Sapphire Verse
- 1.M. Obry, J. Tate, P. Berberich, H. Kinder: In Phonons 89 ed. by S. Hunklinger et al. (World Scientific Singapure 1990), p. 328.Google Scholar