Study of Phonon Pulse Propagation in Silicon and the Effect of N-Processes

  • M. Obry
  • J. Tate
  • P. Berberich
  • H. Kinder
Conference paper
Part of the Springer Series in Solid-State Sciences book series (SSSOL, volume 112)

Abstract

We have studied the propagation of heat pulses in Si (111) between 18 K and 32 K. In this transition region from ballistic to diffusive propagation the ballistic peaks are decreasing rapidly with increasing temperature. However, there is no pronounced maximum of diffusive phonons but a slow monotonous decay. This behavior is described by a Monte Carlo simulation assuming N-processes (1/τ NL α ω 2T3 and 1/τ NT α ω T4) in the presence of strong isotope scattering (1/τ i α ω 4).

Keywords

Tate Sapphire Verse 

References

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    M. Obry, J. Tate, P. Berberich, H. Kinder: In Phonons 89 ed. by S. Hunklinger et al. (World Scientific Singapure 1990), p. 328.Google Scholar
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Copyright information

© Springer-Verlag Berlin Heidelberg 1993

Authors and Affiliations

  • M. Obry
    • 1
  • J. Tate
    • 1
  • P. Berberich
    • 1
  • H. Kinder
    • 1
  1. 1.Physik-Department E10Technische Universität MünchenGarchingFed. Rep. of Germany

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