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Charge-Carrier Collection in Superconducting Titanium Transition-Edge Sensors Deposited on High-Purity Silicon

  • B. L. Dougherty
  • B. Cabrera
  • A. T. Lee
  • M. J. Penn
  • J. G. Pronko
  • B. A. Young
Conference paper
Part of the Springer Series in Solid-State Sciences book series (SSSOL, volume 112)

Abstract

We have found that superconducting titanium transition-edge sensors (TES) deposited on high-purity, monocrystalline silicon operate in two distinct “modes”, distinguished by different intrinsic gains. This difference may be due to changes in efficiency for prompt collection of the energy carried by electrons and holes; variously augmenting the dominant phonon-derived signals. Charge-carrier collection may be modulated by a space-charge region (Schottky-barrier) adjacent to the superconductor. We propose a model for this effect.

Keywords

Pulse Height Monocrystalline Silicon 241Am Source Work Function Difference Intrinsic Gain 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Copyright information

© Springer-Verlag Berlin Heidelberg 1993

Authors and Affiliations

  • B. L. Dougherty
    • 1
  • B. Cabrera
    • 1
  • A. T. Lee
    • 1
  • M. J. Penn
    • 1
  • J. G. Pronko
    • 2
  • B. A. Young
    • 1
  1. 1.Physics DepartmentStanford UniversityStanfordUSA
  2. 2.Lockheed Research and Development DivisionPalo AltoUSA

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