Noise in Scanning Tunneling Microscopy and Surface Phonons
The spatial distribution of the fluctuations of the tunneling current occurring in a Scanning Tunneling Microscope are investigated. Experiments performed in ultra high vacuum on a cleaved (110) surface of GaAs reveal a noise pattern with a commensurate structure of atomic dimensions. The maxima in the noise distribution are located near the Ga-atoms while the maxima in the topography are located either near the Ga- or the As-atoms depending on the polarity of the applied bias. Due to the buckling relaxation of the surface the Ga-atoms have an almost planar coordination resulting in a large vibrational amplitude. The enhanced current noise at the position of the Ga-atoms appears to be associated to fluctuations of the occupation number of a specific librational surface phonon.
KeywordsQuartz Tungsten GaAs Cross Correlation
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- A more detailed discussion will be given in: B. Koslowski, C. Baur, R. Möller, K. Dransfeld, Proceeding of the ‘Van der Ziel Symposium 1992’, St. Louis B. Koslowski, C. Baur, R. Möller, K. Dransfeld, submitted to Surface ScienceGoogle Scholar