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Noise in Scanning Tunneling Microscopy and Surface Phonons

  • R. Möller
  • B. Koslowski
  • C. Baur
  • K. Dransfeld
Conference paper
Part of the Springer Series in Solid-State Sciences book series (SSSOL, volume 112)

Abstract

The spatial distribution of the fluctuations of the tunneling current occurring in a Scanning Tunneling Microscope are investigated. Experiments performed in ultra high vacuum on a cleaved (110) surface of GaAs reveal a noise pattern with a commensurate structure of atomic dimensions. The maxima in the noise distribution are located near the Ga-atoms while the maxima in the topography are located either near the Ga- or the As-atoms depending on the polarity of the applied bias. Due to the buckling relaxation of the surface the Ga-atoms have an almost planar coordination resulting in a large vibrational amplitude. The enhanced current noise at the position of the Ga-atoms appears to be associated to fluctuations of the occupation number of a specific librational surface phonon.

Keywords

Power Spectral Density Lateral Distribution Scan Tunneling Microscope Shot Noise Tunneling Current 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag Berlin Heidelberg 1993

Authors and Affiliations

  • R. Möller
    • 1
  • B. Koslowski
    • 1
  • C. Baur
    • 1
  • K. Dransfeld
    • 1
  1. 1.Fakultät für PhysikUniversität KonstanzKonstanzFed. Rep. of Germany

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