Noise in Scanning Tunneling Microscopy and Surface Phonons

  • R. Möller
  • B. Koslowski
  • C. Baur
  • K. Dransfeld
Conference paper
Part of the Springer Series in Solid-State Sciences book series (SSSOL, volume 112)


The spatial distribution of the fluctuations of the tunneling current occurring in a Scanning Tunneling Microscope are investigated. Experiments performed in ultra high vacuum on a cleaved (110) surface of GaAs reveal a noise pattern with a commensurate structure of atomic dimensions. The maxima in the noise distribution are located near the Ga-atoms while the maxima in the topography are located either near the Ga- or the As-atoms depending on the polarity of the applied bias. Due to the buckling relaxation of the surface the Ga-atoms have an almost planar coordination resulting in a large vibrational amplitude. The enhanced current noise at the position of the Ga-atoms appears to be associated to fluctuations of the occupation number of a specific librational surface phonon.


Power Spectral Density Lateral Distribution Scan Tunneling Microscope Shot Noise Tunneling Current 
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Copyright information

© Springer-Verlag Berlin Heidelberg 1993

Authors and Affiliations

  • R. Möller
    • 1
  • B. Koslowski
    • 1
  • C. Baur
    • 1
  • K. Dransfeld
    • 1
  1. 1.Fakultät für PhysikUniversität KonstanzKonstanzFed. Rep. of Germany

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