Electron Mobility Enhancement in Modulated Phonon Structures

  • X. Th. Zhu
  • H. Goronkin
  • G. Maracas
  • R. Droopad
  • M. Stroscio
Conference paper
Part of the Springer Series in Solid-State Sciences book series (SSSOL, volume 112)

Abstract

We report results of a systematic study of the electron mobility in GaAs/AlAs quantum well samples with and without longitudinal-optical (LO) phonon confinement. This experiment demonstrates an enhanced electron mobility in structures with quantum well widths from 20Å to 70Å and phonon barrier widths of about 11Å. The experimental data are explained in terms of a transition from confined phonon scattering to interface phonon scattering.

Keywords

GaAs 

References

  1. 1.
    X. T. Zhu, H. Goronkin, G. N. Maracas, R. Droopad, and M. Stroscio, Appl. Phys. Lett. 60, 2143 (1992).Google Scholar
  2. 2.
    M. A. Stroscio, G. J. Iafrate, K. W. Kim, M. A. Littlejohn, H. Goronkin, and G. N. Maracas, Appl. Phys. Lett. 59, 1093 (1991).ADSCrossRefGoogle Scholar

Copyright information

© Springer-Verlag Berlin Heidelberg 1993

Authors and Affiliations

  • X. Th. Zhu
    • 1
  • H. Goronkin
    • 1
  • G. Maracas
    • 2
  • R. Droopad
    • 2
  • M. Stroscio
    • 3
  1. 1.Phoenix Corporate Research LaboratoriesMotorola Inc.TempeUSA
  2. 2.Electrical Engineering DepartmentArizona State UniversityTempeUSA
  3. 3.U.S. Army Research OfficeResearch Triangle ParkUSA

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