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Interaction of Phonons with the 2-DEG in a MODFET

  • J. K. Wigmore
  • M. Erol
  • M. Sahraoui-Tahar
  • M. Ari
  • J. H. Davies
  • M. Holland
  • C. Stanley
  • C. D. W. Wilkinson
Conference paper
Part of the Springer Series in Solid-State Sciences book series (SSSOL, volume 112)

Abstract

Using nanosecond pulse techniques, we have studied the direct emission and absorption of phonons by the same two-dimensional electron gas (2DEG) in a GaAs/AlGaAs modulation-doped field effect transistor structure (MODFET) [1]. Pulsed emission of phonons from a heterojunction has been observed by Chin et al [2], and by Hawker et al [3], and absorption by Eisenstein et al [4]. In a MODFET, the additional feature of a Schottky gate allows the carrier concentration and hence the Fermi energy to be varied. It also enables the 2DEG contact resistance to be determined independently during a run at helium temperatures, essential for quantitative analysis.

Keywords

Pulse Emission Phonon Drag Longitudinal Phonon Phonon Absorption Boxcar Integrator 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

References

  1. [1]
    J. K. Wigmore, M. Erol, M. Sahraoui-Tahar and C. D. W. Wilkinson, J. H. Davies and C. Stanley, Semicond. Sci. Technol. 6 1 (1991).Google Scholar
  2. [2]
    M. A. Chin, V. Narayanamurti, H. L. Stormer and J. C. M. Hwang, Phonon Scattering in Condensed Matter IV (Springer, Berlin) 328 (1985).Google Scholar
  3. [3]
    P. Hawker, A. J. Kent, O. M. Hughes and L. J. Challis, Semiconduct. Sci. Technol. 7 B29 (1992).Google Scholar
  4. [4]
    J. P. Eisenstein, V. Narayanmurti, H. L. Stormer, A. Y. Cho and J.C.M. Hwang, Phonon Scattering in Condensed Matter V (Springer, Berlin) 401 (1986).Google Scholar

Copyright information

© Springer-Verlag Berlin Heidelberg 1993

Authors and Affiliations

  • J. K. Wigmore
    • 1
  • M. Erol
    • 1
  • M. Sahraoui-Tahar
    • 1
  • M. Ari
    • 1
  • J. H. Davies
    • 2
  • M. Holland
    • 2
  • C. Stanley
    • 2
  • C. D. W. Wilkinson
    • 2
  1. 1.School of Physics and MaterialsUniversity of LancasterLancasterUK
  2. 2.Department of Electrical and Electronic EngineeringUniversity of GlasgowGlasgowUK

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