Interaction of Phonons with the 2-DEG in a MODFET
Using nanosecond pulse techniques, we have studied the direct emission and absorption of phonons by the same two-dimensional electron gas (2DEG) in a GaAs/AlGaAs modulation-doped field effect transistor structure (MODFET) . Pulsed emission of phonons from a heterojunction has been observed by Chin et al , and by Hawker et al , and absorption by Eisenstein et al . In a MODFET, the additional feature of a Schottky gate allows the carrier concentration and hence the Fermi energy to be varied. It also enables the 2DEG contact resistance to be determined independently during a run at helium temperatures, essential for quantitative analysis.
KeywordsHelium GaAs Clarification
- J. K. Wigmore, M. Erol, M. Sahraoui-Tahar and C. D. W. Wilkinson, J. H. Davies and C. Stanley, Semicond. Sci. Technol. 6 1 (1991).Google Scholar
- M. A. Chin, V. Narayanamurti, H. L. Stormer and J. C. M. Hwang, Phonon Scattering in Condensed Matter IV (Springer, Berlin) 328 (1985).Google Scholar
- P. Hawker, A. J. Kent, O. M. Hughes and L. J. Challis, Semiconduct. Sci. Technol. 7 B29 (1992).Google Scholar
- J. P. Eisenstein, V. Narayanmurti, H. L. Stormer, A. Y. Cho and J.C.M. Hwang, Phonon Scattering in Condensed Matter V (Springer, Berlin) 401 (1986).Google Scholar