Low-Temperature History-Dependent Dielectric Constant in Amorphous SiO2 and SiO1.8 Films
We report observation of a novel history-dependent dielectric constant in two types of amorphous silicon dioxide, dependent on the history of a DC electric field applied to the samples. When the DC field was held constant, the dielectric constant decayed linearly with the logarithm of the time since the DC field was applied. When the DC field was subsequently swept slowly through a range of values, the dielectric constant showed a hole where the DC field had previously been held. We also report on investigations of the frequency- and AC excitation field-dependence of the temperature of the dielectric constant minimum in these materials.
- 1.See previous studies of this system by B. Golding, J.E. Graebner, W.H. Haemmerle: Proc. 7th Int. Conf. Amorphous & Liquid Semiconductors (Edinburgh 1977 ) pp. 367–371Google Scholar