Advertisement

Low-Temperature History-Dependent Dielectric Constant in Amorphous SiO2 and SiO1.8 Films

  • B. Tigner
  • D. J. Salvino
  • S. Rogge
  • D. D. Osheroff
Part of the Springer Series in Solid-State Sciences book series (SSSOL, volume 112)

Abstract

We report observation of a novel history-dependent dielectric constant in two types of amorphous silicon dioxide, dependent on the history of a DC electric field applied to the samples. When the DC field was held constant, the dielectric constant decayed linearly with the logarithm of the time since the DC field was applied. When the DC field was subsequently swept slowly through a range of values, the dielectric constant showed a hole where the DC field had previously been held. We also report on investigations of the frequency- and AC excitation field-dependence of the temperature of the dielectric constant minimum in these materials.

Keywords

Dielectric Constant Amorphous Silicon Dioxide Bias Field Si02 Sample Measured Dielectric Constant 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Reference

  1. 1.
    See previous studies of this system by B. Golding, J.E. Graebner, W.H. Haemmerle: Proc. 7th Int. Conf. Amorphous & Liquid Semiconductors (Edinburgh 1977 ) pp. 367–371Google Scholar

Copyright information

© Springer-Verlag Berlin Heidelberg 1993

Authors and Affiliations

  • B. Tigner
    • 1
  • D. J. Salvino
    • 1
  • S. Rogge
    • 1
  • D. D. Osheroff
    • 1
  1. 1.Department of PhysicsStanford UniversityStanfordUSA

Personalised recommendations