Scattering of High-Frequency Phonons by Implantation Damage in Silicon
We have studied the diffusive scattering of heat pulse phonons from ion implantation damage at the surface of silicon wafers . By correlating the phonon flux with various stages of thermal annealing, we have been able to identify the presence of two distinct diffusive processes. We found that, firstly, some phonons were scattered from the roughness of the interface between the crystalline wafer and the disordered layer produced by implantation. Other phonons passed straight through this interface into the amorphous layer, where they underwent multiple scattering from the intrinsic two-level systems.
- K.R. Strickland, S.C. Edwards, J.K. Wigmore, R.A. Collins and C. Jeynes, Surface and Interface Analysis 18 (1992) to be published.Google Scholar