Scattering of High-Frequency Phonons by Implantation Damage in Silicon

  • J. K. Wigmore
  • K. R. Strickland
  • S. C. Edwards
  • R. A. Collins
Conference paper
Part of the Springer Series in Solid-State Sciences book series (SSSOL, volume 112)

Abstract

We have studied the diffusive scattering of heat pulse phonons from ion implantation damage at the surface of silicon wafers [1]. By correlating the phonon flux with various stages of thermal annealing, we have been able to identify the presence of two distinct diffusive processes. We found that, firstly, some phonons were scattered from the roughness of the interface between the crystalline wafer and the disordered layer produced by implantation. Other phonons passed straight through this interface into the amorphous layer, where they underwent multiple scattering from the intrinsic two-level systems.

References

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    J. Narayan and O.W. Holland, J. Appl. Phys. 56 2913 (1984).ADSCrossRefGoogle Scholar
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    J.J. Freeman and A.C. Anderson, Phonon Scattering in Condensed Matter V (ed. A.C. Anderson and J.P. Wolfe) Springer, Berlin, 32 (1986).CrossRefGoogle Scholar

Copyright information

© Springer-Verlag Berlin Heidelberg 1993

Authors and Affiliations

  • J. K. Wigmore
    • 1
  • K. R. Strickland
    • 1
  • S. C. Edwards
    • 1
  • R. A. Collins
    • 1
  1. 1.School of Physics and MaterialsUniversity of LancasterLancasterUK

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