Abstract
The technique of thermal coevaporation for the preparation of thin YBa2Cu3O7 films yields excellent superconducting properties and, at the same time, very smooth surfaces. Scanning tunnelling microscopy (STM) reveals tiny growth spirals with extremely high density on MgO, and layer-by-layer growth on SrTiO3. On SrTiO3 we also observe very pronounced RHEED-oscillations. The relatively low substrate temperatures of 600 to 650°C for optimum epitaxial growth allow film preparation also on semiconductor substrates. On silicon with buffer layers of yttria stabilized zirconia (YSZ), we have grown epitaxial films with Tc = 87..89K, jc(77K) = 2.5·106A/cm2, ρ(100K) = 40μΩ, and a high degree of smoothness. Recently we have also succeeded to grow epitaxial films on GaAs with buffer layers of MgO, with Tc = 86.8K, jc(77K) = 7·105A/cm2, and ρ(100K) = 100μΩ cm. These values are markedly better than those obtained with pulsed laser ablation by Fork, Nashimoto, and Geballe. Integrated superconducting and semiconducting devices have now come in sight.
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© 1993 Springer-Verlag Berlin, Heidelberg
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Kinder, H. et al. (1993). Epitaxial YBCO Films on MgO, SrTiO3, Si, and GaAs by Thermal Coevaporation. In: Kuzmany, H., Mehring, M., Fink, J. (eds) Electronic Properties of High-Tc Superconductors. Springer Series in Solid-State Sciences, vol 113. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-84865-0_8
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DOI: https://doi.org/10.1007/978-3-642-84865-0_8
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