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Surface Modification with the SXM’s

  • Conference paper
Book cover Low-Dimensional Electronic Systems

Part of the book series: Springer Series in Solid-State Sciences ((SSSOL,volume 111))

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Abstract

Two dimensional structures[1] in semiconductors are the major focus of this meeting. Diverse studies of these 2D devices where the electrons are confined to a single layer in these semiconducting material has substantially increased our knowledge of the behavior of electrons. Confinement in the lateral plane is equally desirable but this is much more difficult to achieve because of the limitations of conventional lithography. Conventional lithography is limited in two ways: (a) the lateral structures are large as compared to the electron wavelength, and (b) the high energy of the ions used for reactive etching create a damage layer in the sidewalls deep enough to affect the operation of the devices.

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Author information

Authors and Affiliations

  1. Edward L. Ginzton Laboratory, Stanford University, Stanford, CA, 94305-4085, USA

    C. F. Quate

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  1. C. F. Quate
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Editors and Affiliations

  1. Institut für Halbleiterphysik, Universität Linz, A-4040, Linz, Austria

    Günther Bauer

  2. Institut für Festkörperphysik, Universität Wien, A-1090, Wien, Austria

    Friedemar Kuchar

  3. Institut für Experimentalphysik, Universität Linz, A-4040, Linz, Austria

    Helmut Heinrich

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© 1992 Springer-Verlag Berlin Heidelberg

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Quate, C.F. (1992). Surface Modification with the SXM’s. In: Bauer, G., Kuchar, F., Heinrich, H. (eds) Low-Dimensional Electronic Systems. Springer Series in Solid-State Sciences, vol 111. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-84857-5_8

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  • DOI: https://doi.org/10.1007/978-3-642-84857-5_8

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-84859-9

  • Online ISBN: 978-3-642-84857-5

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