Si/SiGe Quantum Wells: Transport Properties and Possible Devices

  • K. Ismail
Conference paper
Part of the Springer Series in Solid-State Sciences book series (SSSOL, volume 111)


Si/SiGe quantum wells have been investigated in terms of transport properties and potential device applications. The layers have been grown using Ultra High Vacuum Chemical Vapor Deposition in the temperature range of 450–500 C. The effect of strain has been investigated by tuning the Ge content in a specially designed buffer layer. High mobility in modulation-doped p- and n-type materials has been demonstrated. Excellent performance from modulation-doped field-effect transistors has been obtained and electron resonant tunneling has been demonstrated for the first time.


Resonant Tunneling SiGe Layer Resonant Tunneling Diode Fractional Quantum Hall Effect Spacer Layer Thickness 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.


  1. [1]
    B.S. Meyerson, K.J. Uram, and F. Legoues, Appl. Phys. Lett., 53, 2555 (1988).CrossRefGoogle Scholar
  2. [2]
    K. Ismail, B.S. Meyerson, and P.J. Wang, Appl. Phys. Lett., 58, 2117 (1991).CrossRefGoogle Scholar
  3. [3]
    Y.J. Mii, Y.H. Xie, E.A. Fitzgerald, D. Monroe, F.H. Thiel, B.E. Weir, and L.C. Feldman, Appl. Phys. Lett., 59, 1611 (1991).CrossRefGoogle Scholar
  4. [4]
    F. Schaffler, D. Toebben, H.J. Herzog, G. Abstreiter, and B. Hollaender, preprintGoogle Scholar
  5. [5]
    E. Kasper, Surf. Sci., 174, 630 (1986).CrossRefGoogle Scholar
  6. [6]
    F.F. Fang, P.J. Wang, B.S. Meyerson, J.J. Nocera, and K.Ismail, presented at “Electronic Properties of Two Dimensional Structures”, Nara, Japan (1991).Google Scholar
  7. [7]
    U. Gennser, V.P. Kesan, S.S. Iyer, T.J. Bucelot, and E.S. Yang, J. Vac. Sci. Technol. B 8, 210 (1990).CrossRefGoogle Scholar
  8. [8]
    K. Ismail, B.S. Meyerson, and P.J. Wang, Appl. Phys. Lett., 59, 973, (1991).CrossRefGoogle Scholar
  9. [9]
    H. Daembkes, H. Herzog, H. Jorke, H. Kibbel, and E. Kasper, IEEE Trans. on Elect. Dev., 33, 633 (1986).CrossRefGoogle Scholar
  10. [10]
    K. Ismail, B.S. Meyerson, S. Rishton, J. Chu, P.J. Wang, S. Nelson and J.J. Nocera, to be published.Google Scholar

Copyright information

© Springer-Verlag Berlin Heidelberg 1992

Authors and Affiliations

  • K. Ismail
    • 1
    • 2
  1. 1.Department of Electronics, Faculty of EngineeringCairo UniversityEgypt
  2. 2.IBM Research DivisionT.J. Watson Research CenterYorktown HeightsUSA

Personalised recommendations