Si/SiGe Quantum Wells: Transport Properties and Possible Devices
Si/SiGe quantum wells have been investigated in terms of transport properties and potential device applications. The layers have been grown using Ultra High Vacuum Chemical Vapor Deposition in the temperature range of 450–500 C. The effect of strain has been investigated by tuning the Ge content in a specially designed buffer layer. High mobility in modulation-doped p- and n-type materials has been demonstrated. Excellent performance from modulation-doped field-effect transistors has been obtained and electron resonant tunneling has been demonstrated for the first time.
KeywordsResonant Tunneling SiGe Layer Resonant Tunneling Diode Fractional Quantum Hall Effect Spacer Layer Thickness
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- F. Schaffler, D. Toebben, H.J. Herzog, G. Abstreiter, and B. Hollaender, preprintGoogle Scholar
- F.F. Fang, P.J. Wang, B.S. Meyerson, J.J. Nocera, and K.Ismail, presented at “Electronic Properties of Two Dimensional Structures”, Nara, Japan (1991).Google Scholar
- K. Ismail, B.S. Meyerson, S. Rishton, J. Chu, P.J. Wang, S. Nelson and J.J. Nocera, to be published.Google Scholar