Optical Properties of Quantum Wires Grown on Nonplanar Substrates
- 152 Downloads
The structure and luminescence properties of GaAs/AlGaAs quantum wires (QWRs) grown by organometallic chemical vapor deposition on nonplanar substrates are described. These crescent-shaped QWRs, as narrow as 10nm in effective width, are formed at the bottom of channels etched into the substrate prior to epitaxy. The wires exhibit high luminescence efficiency and carrier lifetimes comparable to those measured in quantum wells (QWLs) owing to their in situ formation, which minimizes interface defects. Quasi-one dimensional subbands are observed in photoluminescence (PL), PL excitation and amplified spontaneous emission spectra of these QWRs. PL and time-resolved cathodoluminescence studies reveal efficient carrier capture into the QWRs via QWL layers connected to the wires. Application of these structures in efficient QWR lasers is also discussed.
KeywordsCarrier Lifetime Amplify Spontaneous Emission Heavy Hole Light Hole Confinement Energy
Unable to display preview. Download preview PDF.
- Y. Arakawa and A. Yariv, IEEE J. Quantum Electron. QE-22, 1887 (1986).Google Scholar
- E. Kapon, M. Walther, D.M. Hwang, E. Colas, C. Chen and L.M. Schiavone, 1991 Annual Meeting of the Optical Society of America, November 3–8, 1991, San Jose, California, Postdeadline paper PD 16.Google Scholar
- J. Christen, E. Kapon, E. Colas, D.M. Hwang, L.M. Schiavone, M. Grundmann and D. Bimberg, Surf. Sci. (in print).Google Scholar
- M. Walther, E. Kapon, D.M. Hwang, E. Colas and L. Nunes, Phys. Rev. B, Rap. Commun. March 1992 (in print).Google Scholar
- J. Christen, M. Grundmann, E. Kapon, E. Colas, D.M Hwang and D. Bimberg, to be published.Google Scholar
- E. Kapon, D.M. Hwang, M. Walther, R. Bhat and N.G. Stoffel, Surf. Sci. (in print).Google Scholar
- H. Hilmer, A. Forchel, S. Hansmann, M. Morohashi, E. Lopez, H.P. Meier and K. Ploog, Phys. Rev. B 39, 10 901 (1989).Google Scholar