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Optical Properties of Quantum Wires Grown on Nonplanar Substrates

  • E. Kapon
  • M. Walther
  • J. Christen
  • M. Grundmann
  • D. M. Hwang
  • E. Colas
  • D. Bimberg
Conference paper
  • 152 Downloads
Part of the Springer Series in Solid-State Sciences book series (SSSOL, volume 111)

Abstract

The structure and luminescence properties of GaAs/AlGaAs quantum wires (QWRs) grown by organometallic chemical vapor deposition on nonplanar substrates are described. These crescent-shaped QWRs, as narrow as 10nm in effective width, are formed at the bottom of channels etched into the substrate prior to epitaxy. The wires exhibit high luminescence efficiency and carrier lifetimes comparable to those measured in quantum wells (QWLs) owing to their in situ formation, which minimizes interface defects. Quasi-one dimensional subbands are observed in photoluminescence (PL), PL excitation and amplified spontaneous emission spectra of these QWRs. PL and time-resolved cathodoluminescence studies reveal efficient carrier capture into the QWRs via QWL layers connected to the wires. Application of these structures in efficient QWR lasers is also discussed.

Keywords

Carrier Lifetime Amplify Spontaneous Emission Heavy Hole Light Hole Confinement Energy 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag Berlin Heidelberg 1992

Authors and Affiliations

  • E. Kapon
    • 1
  • M. Walther
    • 1
  • J. Christen
    • 2
  • M. Grundmann
    • 1
    • 2
  • D. M. Hwang
    • 1
  • E. Colas
    • 1
  • D. Bimberg
    • 2
  1. 1.BellcoreRed BankUSA
  2. 2.Institut für Festkörperphysik ITechnische Universität BerlinBerlin 12Fed. Rep. of Germany

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