Direct Fabrication of III–V Semiconductor Quantum Dots and Quantum Wires by Molecular Beam Epitaxy
We have developed two new approaches to directly synthesize III-V semiconductor quantum dots and quantum wires by epitaxial growth which are free of defects at the respective heterointerfaces. First, we have obtained isolated InAs quantum dots in a crystalline GaAs matrix by deposition of fractional monolayers of InAs at the step edges of terraced (001) GaAs surfaces. Second, we obtained GaAs quantum wire structures in an AlAs matrix through the in situ creation of distinct surface and interface corrugations on (311)A GaAs during molecular beam epitaxy. The observed optical properties are directly related to the reduced dimensionality of these unique nanostructured semiconductors.
KeywordsQuantum Wire Step Edge GaAs Surface Polarization Anisotropy RHEED Pattern
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