Study of epitaxial growth by combination of STM and LEED

  • M. Henzler
  • U. Köhler
  • O. Jusko
Conference paper
Part of the ESPRIT Basic Research Series book series (ESPRIT BASIC)


The first stages of epitaxial growth determine the growth of films with respect to general growth, orientation, smoothness, homogeneity and all other types of possible deviations from an ideal epitaxial film. For those studies it is important to see details of the starting substrate and of growing islands by direct microscopy, which is best accomplished by STM. The same way it is necessary to have good average values and distribution functions of sizes, distances and defect densities, which is best done by diffraction. It will be demonstrated, how the STM images from small areas and the diffraction patterns from large areas with low energy electrons (LEED) combine static informations on single defects and single islands with kinetic informations during growth at any temperature for a best description of homo-epitaxy and heteroepitaxy. The presence of defects like dislocations, stacking faults or domain boundaries is shown as their importance for nucleation. The kinetics of film growth is derived from diffraction measurements during deposition or annealing. Some defects like lattice constant variations (strain) or orientational defects (mosaics) are also seen in diffraction. In this way only a combination of techniques will enable a detailed description of growth processes.


Scan Tunneling Microscopy Step Height Partial Dislocation Scan Tunneling Microscopy Image Reflection High Energy Electron Diffraction 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.


  1. /1/.
    J.A. Venables, G.D.T. Spiller and M. Hanbucken (1984) Rep. Progr. Phys. 47: 399CrossRefGoogle Scholar
  2. /2/.
    E. Bauer, W. Telieps (1987) Scanning Microscopy Suppl. 1: 99Google Scholar
  3. /3/.
    3/ P.K. Larsen, P.J. Dobson, eds. (1988) Reflection High Energy Electron Diffraction and Reflection Electron Imaging of Surfaces, NATO ASI Series B, Vol. 188, Plenum Press New YorkGoogle Scholar
  4. /4/.
    M. Henzler (1987) in: Festkörperprobleme Vol. 27, p 185, P. Grorse (ed.) Vieweg, BraunschweigGoogle Scholar
  5. /5/.
    J. Wollschläger, J. Falta, M. Henzler (1990) Appl. Phys. A50: 57CrossRefGoogle Scholar
  6. /6/.
    U. Köhler, J.E. Demuth, R.J. Hamers (1989) J. Vac. Sci. Techn. A/7: 2860Google Scholar
  7. /7/.
    H. Claus Diploma thesis, Hannover 1988Google Scholar
  8. /8/.
    M. Horn von Hoegen, J. Falta, M. Henzler (1989) Thin Solid Films 183: 213Google Scholar
  9. /9/.
    R. Altsinger, H. Busch, M. Horn, M. Henzler (1988) Surf. Sci. 200: 235CrossRefGoogle Scholar
  10. /10/.
    U. Köhler, O. Jusko, to be publishedGoogle Scholar
  11. /11/.
    J.Y. Tsao, E. Chason, U. Köhler, R. Hamers (1989) Phys. Rev. B40: 11951CrossRefGoogle Scholar
  12. /12/.
    S. Heun, J. Falta, M. Henzler (1991) Surf. Sci. in pressGoogle Scholar
  13. /13/.
    J. Wollschläger, PhD thesis Hannover 1990Google Scholar
  14. /14/.
    G. Meyer, M. Michailov, M. Henzler (1988) Surf. Sci. 202: 125CrossRefGoogle Scholar

Copyright information

© ECSC-EEC-EAEC, Brussels-Luxembourg 1992

Authors and Affiliations

  • M. Henzler
    • 1
  • U. Köhler
    • 1
  • O. Jusko
    • 1
  1. 1.Institut für FestkörperphysikUniversität HannoverHannover 1Deutschland

Personalised recommendations