Epitaxial Growth of Cubic SiC Using Various Alkyl-Silicon Compounds by Chemical Vapor Deposition

Abstract

Cubic SiC was grown on Si(100) and (111) substrates by atmospheric pressure chemical vapor deposition using hexamethyldisilane (HMDS) or tetramethylsilane (TMS) as a source gas. The growth rate of SiC was independent of the growth temperature above 1050 °C in both HMDS/H₂ and TMS/H₂ system. Single crystalline 3C-SiC(111) was grown at 1100 °C and 1150 °C for HMDS/H₂ and TMS/H₂ system, respectively. In this case, the growth rate was as high as 700 Å/min. Crack lines were observed in the 5 μm thick epilayer, even though the growth temperature was as low as 1100 ° C.