Selective Growth of SiC and Application to Heterojunction Devices

  • S. Nishino
  • H. Tanaka
  • K. Takahashi
  • J. Saraie
Part of the Springer Proceedings in Physics book series (SPPHY, volume 71)


Single crystal cubic SiC films were selectively grown on a pattered Si substrate by chemical vapor deposition (CVD) using Si2H6, C2H2 and HCl at normal pressure at a substrate temperature of 1100 °C. A small amount of HCl was necessary to grow a SiC film selectively. By applying selective growth, a heterodiode and heterobipolar transistor(HBT) were made using a patterned SiO2 mask on the Si substrate. The Heterojunction diode showed good rectifying characteristics (ideality factor:1.03, leakage current:1pA). The HBT showed a current gain of 20.


Ideality Factor Selective Growth Reflection High Energy Electron Diffraction Current Gain Heterojunction Bipolar Transistor 
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Copyright information

© Springer-Verlag Berlin Heidelberg 1992

Authors and Affiliations

  • S. Nishino
    • 1
  • H. Tanaka
    • 1
  • K. Takahashi
    • 1
  • J. Saraie
    • 1
  1. 1.Department of Electronics and Information Science, Faculty of Engineering and DesignKyoto Institute of TechnologySakyo-ku, Kyoto 606Japan

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