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Selective Growth of SiC and Application to Heterojunction Devices

  • S. Nishino
  • H. Tanaka
  • K. Takahashi
  • J. Saraie
Part of the Springer Proceedings in Physics book series (SPPHY, volume 71)

Abstract

Single crystal cubic SiC films were selectively grown on a pattered Si substrate by chemical vapor deposition (CVD) using Si2H6, C2H2 and HCl at normal pressure at a substrate temperature of 1100 °C. A small amount of HCl was necessary to grow a SiC film selectively. By applying selective growth, a heterodiode and heterobipolar transistor(HBT) were made using a patterned SiO2 mask on the Si substrate. The Heterojunction diode showed good rectifying characteristics (ideality factor:1.03, leakage current:1pA). The HBT showed a current gain of 20.

Keywords

Ideality Factor Selective Growth Reflection High Energy Electron Diffraction Current Gain Heterojunction Bipolar Transistor 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag Berlin Heidelberg 1992

Authors and Affiliations

  • S. Nishino
    • 1
  • H. Tanaka
    • 1
  • K. Takahashi
    • 1
  • J. Saraie
    • 1
  1. 1.Department of Electronics and Information Science, Faculty of Engineering and DesignKyoto Institute of TechnologySakyo-ku, Kyoto 606Japan

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