Gamma-Ray Irradiation Effects on Cubic Silicon Carbide Metal-Oxide-Semiconductor Structure
Gamma-ray irradiation effects on cubic silicon carbide (3C-SiC) metal-oxide-semiconductor (MOS) structures have been studied with high frequency capacitance-voltage measurements. Using Termann analysis to determine the densities of interface traps and oxide traps, we found a 2/3 power law dependence of the radiation-induced traps on the absorbed dose. The generation of these traps was found to depend on bias during irradiation, similar to those of Si MOS devices. We also compared the radiation response of dry and pyrogenic oxides on 3C-SiC with that of dry oxides of Si, and showed less trapping in pyrogenic 3C-SiC oxides.
KeywordsSi02 Layer Interface Trap Oxide Trap Crystalline Silicon Carbide Applied Electric Field Intensity
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